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dc.contributor.authorPeng, Weinaen_US
dc.contributor.authorAnand, Benoyen_US
dc.contributor.authorLiu, Lihongen_US
dc.contributor.authorSampat, Siddharthen_US
dc.contributor.authorBearden, Brandon E.en_US
dc.contributor.authorMalko, Anton V.en_US
dc.contributor.authorChabal, Yves J.en_US
dc.date.accessioned2016-07-20T22:17:55Z
dc.date.available2016-07-20T22:17:55Z
dc.date.created2015-12-14en_US
dc.date.issued2015-12-14en_US
dc.identifier.issn2040-3364en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/4949
dc.description.abstractThe rapid development of perovskite solar cells has focused its attention on defects in perovskites, which are gradually realized to strongly control the device performance. A fundamental understanding is therefore needed for further improvement in this field. Recent efforts have mainly focused on minimizing the surface defects and grain boundaries in thin films. Using time-resolved photoluminescence spectroscopy, we show that bulk defects in perovskite samples prepared using vapor assisted solution process (VASP) play a key role in addition to surface and grain boundary defects. The defect state density of samples prepared at 150 °C (~10¹⁷ cm⁻³) increases by 5 fold at 175 °C even though the average grains size increases slightly, ruling out grain boundary defects as the main mechanism for the observed differences in PL properties upon annealing. Upon surface passivation using water molecules, the PL intensity and lifetime of samples prepared at 200 °C are only partially improved, remaining significantly lower than those prepared at 150 °C. Thus, the present study indicates that the majority of these defect states observed at elevated growth temperatures originates from bulk defects and underscores the importance to control the formation of bulk defects together with grain boundary and surface defects to further improve the optoelectronic properties of perovskites.en_US
dc.language.isoenen_US
dc.publisherRoyal Society of Chemistryen_US
dc.relation.urihttp://dx.doi.org/10.1039/c5nr06222e
dc.rights©2016 The Royal Society of Chemistry. This article may not be further made available or distributed.en_US
dc.subjectGrain boundariesen_US
dc.subjectGrain--Growthen_US
dc.subjectMoleculesen_US
dc.subjectPerovskiteen_US
dc.subjectPhotoluminescence spectroscopyen_US
dc.subjectSolar cellsen_US
dc.subjectHalide perovskitesen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectPassivationen_US
dc.titleInfluence of Growth Temperature on Bulk and Surface Defects in Hybrid Lead Halide Perovskite Filmsen_US
dc.type.genrearticleen_US
dc.identifier.bibliographicCitationPeng, W., B. Anand, L. Liu, S. Sampat, et al. 2016. "Influence of growth temperature on bulk and surface defects in hybrid lead halide perovskite films." Nanoscale 2016(3), doi:10.1039/c5nr06222e.en_US
dc.source.journalNanoscaleen_US
dc.identifier.issue3en_US


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