Far Infrared Edge Photoresponse and Persistent Edge Transport in an Inverted InAs/GaSb Heterostructure
Date
2016-01-07
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American Institute of Physics Inc
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Abstract
Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.
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Heterojunctions, Indium antimonide, Quantum chemistry, Semiconductors, Quantum wells
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This work was supported by the Department of Energy, Office of Basic Energy Science, Division of Materials Sciences and Engineering. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy’s National Nuclear Security Administration under Contract No. DEAC04-94AL85000.
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©2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.