Vandenberghe, William G.
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William G. Vandenberghe is an Assistant Professor in Materials Science and Engineering. His research interests include:
- Tunnel field-effect transistors
- Band-to-band tunneling
- Uses of two-dimensional materials and topological insulators for new devices
- Electron transport at the nanoscale.
Works in Treasures @ UT Dallas are made available exclusively for educational purposes such as research or instruction. Literary rights, including copyright for published works held by the creator(s) or their heirs, or other third parties may apply. All rights are reserved unless otherwise indicated by the copyright owner(s).
Recent Submissions
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Scalable Atomistic Simulations of Quantum Electron Transport Using Empirical Pseudopotentials
(Elsevier B.V., 2019-06-17)The simulation of charge transport in ultra-scaled electronic devices requires the knowledge of the atomic configuration and the associated potential. Such “atomistic” device simulation is most commonly handled using a ... -
Carrier Transport in Two-Dimensional Topological Insulator Nanoribbons in the Presence of Vacancy Defects
(IOP Publishing Ltd, 2019-02-05)Using the non-equilibrium Green's function formalism, we study carrier transport through imperfect two-dimensional (2D) topological insulator (TI) ribbons. In particular, we investigate the effect of vacancy defects on the ... -
Theoretical Studies of Electronic Transport in Monolayer and Bilayer Phosphorene: A Critical Overview
Recent ab initio theoretical calculations of the electrical performance of several two-dimensional materials predict a low-field carrier mobility that spans several orders of magnitude (from 26000 to 35 cm²V⁻¹s⁻¹, for ... -
Modeling of Electron Transport in Nanoribbon Devices Using Bloch Waves
One-dimensional (1D) materials present the ultimate limit of extremely scaled devices by virtue of their spatial dimensions and the excellent electrostatic gate control in the transistors based on these materials. Among ... -
Dielectric Properties of Hexagonal Boron Nitride and Transition Metal Dichalcogenides: From Monolayer to Bulk
Hexagonal boron nitride (h-BN) and semiconducting transition metal dichalcogenides (TMDs) promise greatly improved electrostatic control in future scaled electronic devices. To quantify the prospects of these materials in ... -
Minimizing Performance Degradation Induced by Interfacial Recombination in Perovskite Solar Cells through Tailoring of the Transport Layer Electronic Properties
The performance of hybrid organic-inorganic metal halide perovskite solar cells is investigated using one-dimensional drift-diffusion device simulations. We study the effects of interfacial defect density, doping concentration, ... -
Theoretical Simulation of Negative Differential Transconductance in Lateral Quantum Well nMOS Devices
(American Institute of Physics Inc, 2017-01-23)We present a theoretical study of the negative differential transconductance (NDT) recently observed in the lateral-quantum-well Si n-channel field-effect transistors J. Appl. Phys. 118, 124505 (2015)]. In these devices, ... -
Mermin-Wagner Theorem, Flexural Modes, and Degraded Carrier Mobility in Two-Dimensional Crystals with Broken Horizontal Mirror Symmetry
(Amer Physical Soc, 2016-04-11)We show that the electron mobility in ideal, free-standing two-dimensional "buckled" crystals with broken horizontal mirror (σ_h) symmetry and Dirac-like dispersion (such as silicene and germanene) is dramatically affected ...
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