Vandenberghe, William G.
William G. Vandenberghe is an Assistant Professor in Materials Science and Engineering. His research interests include:
- Tunnel field-effect transistors
- Band-to-band tunneling
- Uses of two-dimensional materials and topological insulators for new devices
- Electron transport at the nanoscale.
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One-dimensional (1D) materials present the ultimate limit of extremely scaled devices by virtue of their spatial dimensions and the excellent electrostatic gate control in the transistors based on these materials. Among ...
Dielectric Properties of Hexagonal Boron Nitride and Transition Metal Dichalcogenides: From Monolayer to Bulk Hexagonal boron nitride (h-BN) and semiconducting transition metal dichalcogenides (TMDs) promise greatly improved electrostatic control in future scaled electronic devices. To quantify the prospects of these materials in ...
Minimizing Performance Degradation Induced by Interfacial Recombination in Perovskite Solar Cells through Tailoring of the Transport Layer Electronic Properties The performance of hybrid organic-inorganic metal halide perovskite solar cells is investigated using one-dimensional drift-diffusion device simulations. We study the effects of interfacial defect density, doping concentration, ...
Theoretical Simulation of Negative Differential Transconductance in Lateral Quantum Well nMOS Devices (American Institute of Physics Inc, 2017-01-23)We present a theoretical study of the negative differential transconductance (NDT) recently observed in the lateral-quantum-well Si n-channel field-effect transistors J. Appl. Phys. 118, 124505 (2015)]. In these devices, ...
Mermin-Wagner Theorem, Flexural Modes, and Degraded Carrier Mobility in Two-Dimensional Crystals with Broken Horizontal Mirror Symmetry (Amer Physical Soc, 2016-04-11)We show that the electron mobility in ideal, free-standing two-dimensional "buckled" crystals with broken horizontal mirror (σ_h) symmetry and Dirac-like dispersion (such as silicene and germanene) is dramatically affected ...