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Dielectric Properties of Hexagonal Boron Nitride and Transition Metal Dichalcogenides: From Monolayer to Bulk
Hexagonal boron nitride (h-BN) and semiconducting transition metal dichalcogenides (TMDs) promise greatly improved electrostatic control in future scaled electronic devices. To quantify the prospects of these materials in ...
Scalable Atomistic Simulations of Quantum Electron Transport Using Empirical Pseudopotentials
(Elsevier B.V., 2019-06-17)
The simulation of charge transport in ultra-scaled electronic devices requires the knowledge of the atomic configuration and the associated potential. Such “atomistic” device simulation is most commonly handled using a ...