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Theoretical Simulation of Negative Differential Transconductance in Lateral Quantum Well nMOS Devices
(American Institute of Physics Inc, 2017-01-23)
We present a theoretical study of the negative differential transconductance (NDT) recently observed in the lateral-quantum-well Si n-channel field-effect transistors J. Appl. Phys. 118, 124505 (2015)]. In these devices, ...