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    Organic-Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD)

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    Author
    Huang, Jie
    Zhang, Hengji
    Lucero, Antonio
    Cheng, Lanxia
    KC, Santosh
    Wang, Jian
    Hsu, Julia W. P.
    Cho, Kyeongjae
    Kim, Jiyoung
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    Abstract
    Abstract
    Molecular-atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic-inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition temperature. Self-limiting growth is observed for both HQ and DEZ precursors. The growth rate remains constant at approximately 2.8 Å per cycle at 150°C. The hybrid materials exhibit n-type semiconducting behavior with a field effect mobility of approximately 5.7 cm² V⁻¹ s⁻¹ and an on/off ratio of over 103 following post annealing at 200°C in nitrogen. The resulting films are characterized using ellipsometry, Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), UV-Vis spectroscopy, transistor behavior, and Hall-effect measurements. Density functional theory (DFT) and many-body perturbation theory within the GW approximation are also performed to assist the explanation and understanding of the experimental results. This research offers n-channel materials as valuable candidates for efficient organic CMOS devices. © 2016.
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    Includes supplementary material.
    URI
    http://hdl.handle.net/10735.1/5612
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    • Cho, Kyeongjae
    • Hsu, Julia W. P.
    • Kim, Jiyoung

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