Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

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Institute of Electronics Engineers of Korea

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Abstract

Monolithically integrated devices are strongly desired in next generation power ICs to reduce the chip size and improve the efficiency and frequency response. Three examples of the embedment of different functional diode(s) into AlGaN/GaN heterojunction field-effect transistors are presented, which can minimize the parasitic effects caused by interconnection between devices.

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Keywords

Gallium nitride, Modulation-doped field-effect transistors, Diodes, Schottky-barrier, Diodes, Frequency response (Electrical engineering), Heterojunctions, Integrated circuits, Field-effect transistors

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Ministry of Trade, Industry and Energy/Korea Evaluation Institute of Industrial Technology grant (10048931); National Research Foundation of Korea grant (2012M3A7B4035274.)

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CC BY-NC 4.0 (Attribution-NonCommercial), ©2016 The Authors

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