Impurity and Silicate Formation Dependence on O₃ Pulse Time and the Growth Temperature in Atomic-Layer-Deposited La₂O₃ Thin Films
Park, Tae Joo
Wallace, Robert M.
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Atomic-layer-deposited La₂O₃ films were grown on Si with different O₃ pulse times and growth temperatures. The interfacial reactions and impurity behaviors were observed using in situ X-ray photoelectron spectroscopy. Longer pulse time of O₃ formed the solid SiO₂ interfacial barrier layer, which suppressed La-silicate formation. Meanwhile, the carboxyl compound acting as an impurity phase was replaced with LaCO₃ on increasing the O₃ pulse time due to further oxidation and reaction of La. Higher growth temperatures enhanced La-silicate formation by mixed diffusion of Si and La₂O₃, during which most of the La₂O₃ phase was consumed at 400 °C. C and N impurities decreased with increasing growth temperature and completely disappear at 400 °C.