Odd-Integer Quantum Hall States and Giant Spin Susceptibility in P -Type Few-Layer WSe₂

Date

2017-02-10

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Journal ISSN

Volume Title

Publisher

American Physical Society

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Abstract

We fabricate high-mobility p-type few-layer WSe₂ field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level crossing effects at ultralow coincident angles, revealing that the Zeeman energy is about 3 times as large as the cyclotron energy near the valence band top at the Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe₂, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe₂ offers a unique platform with unusually heavy hole carriers and a substantially enhanced g factor for exploring strongly correlated phenomena.

Description

Includes supplementary material

Keywords

Magnetic fields, Magnetic susceptibility, Quantum Hall effect, Quantum theory, Cyclotrons, Landau levels, Field-effect transistors, Tungsten(IV) Selenide

item.page.sponsorship

Research Grants Council of Hong Kong (Projects No. 16302215, No. HKU9/CRF/13G, No. 604112, and No. N_HKUST613/12); NSF Grant No. PHY11-25915.

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©2017 American Physical Society.

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