Odd-Integer Quantum Hall States and Giant Spin Susceptibility in P -Type Few-Layer WSe₂
Ho, K. M.
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We fabricate high-mobility p-type few-layer WSe₂ field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level crossing effects at ultralow coincident angles, revealing that the Zeeman energy is about 3 times as large as the cyclotron energy near the valence band top at the Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe₂, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe₂ offers a unique platform with unusually heavy hole carriers and a substantially enhanced g factor for exploring strongly correlated phenomena.
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