Covalent Nitrogen Doping in Molecular Beam Epitaxy-Grown and Bulk WSe₂
Smyth, Christopher M.
Cormier, Christopher R.
Hinkle, Christopher L.
Wallace, Robert M.
MetadataShow full item record
Covalent p-type doping of WSe₂ thin films grown by molecular beam epitaxy and WSe₂ exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate covalently bonded nitrogen in the WSe₂ lattice as well as tunable nitrogen concentration with N₂ plasma exposure time. Furthermore, nitrogen incorporation induces compressive strain on the WSe₂ lattice after N₂ plasma exposure. Finally, atomic force microscopy and scanning tunneling microscopy reveal that N₂ plasma treatment needs to be carefully tuned to avoid any unwanted strain or surface damage.
Includes supplementary material