Now showing items 1-5 of 5
High-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃
(MDPI AG, 2019-03-30)
We report an excellent growth behavior of a high-κ dielectric on ReS₂ , a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al₂O₃ thin film on the UV-Ozone pretreated surface ...
Structural, Chemical and Electrical Properties of CdS Thin Films Fabricated by Pulsed Laser Deposition Using Varying Background Gas Pressure
(Elsevier B.V., 2019-05-07)
The present study outlines the evolution of the composition, strain and electrical properties of cadmium sulfide (CdS) thin films deposited via pulsed laser deposition (PLD), under varied chamber pressure ranging from 0.13 ...
Mechanistic Study of the Atomic Layer Deposition of Scandium Oxide Films Using Sc(MeCp)₂(Me₂pz) and Ozone
(A V S Amer Inst Physics, 2019-01-02)
The atomic layer deposition (ALD) of scandium oxide (Sc₂O₃) thin films is investigated using Sc(MeCp)₂(Me₂pz) (1, MeCp = methylcyclopentadienyl, Me₂pz = 3,5-dimethylpyrazolate) and ozone on hydroxyl-terminated oxidized ...
Polytype Control of MoS₂ Using Chemical Bath Deposition
(American Institute of Physics Inc., 2019-05-01)
Molybdenum disulfide (MoS₂) has a wide range of applications from electronics to catalysis. While the properties of single-layer and multilayer MoS₂ films are well understood, controlling the deposited MoS₂ polytype remains ...
Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature
(Wiley-VCH Verlag, 2019-06-11)
The interconnect half-pitch size will reach ≈20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be >4 nm to ensure acceptable liner and diffusion barrier properties. ...