Now showing items 1-3 of 3
Low-Temperature Thin Film Transistors Based on Pulsed Laser Deposited CdS Active Layers
Cadmium sulfide (CdS) thin films as n-type semiconductor material were deposited by pulsed laser deposition by varying the argon pressure at room temperature. The structural, morphological and stoichiometric characteristics ...
Development and Characterization of Photodiode N-ZnO/p-Si By Radio Frecuency Sputtering, A Sensor with Low Voltage Operation and its Response to Visible and UV Light
(Elsevier Science SA, 2018-10-11)
The heterostructure n-ZnO/p-Si was fabricated by Radio Frequency Sputtering. The photodiode characteristics were obtained from current-voltage curves. The photovoltaic effect and photodiode sensitivity were measured by ...
Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature
(Wiley-VCH Verlag, 2019-06-11)
The interconnect half-pitch size will reach ≈20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be >4 nm to ensure acceptable liner and diffusion barrier properties. ...