Gohil, Ghanshyamsinh V.
- Power electronics
- Wide-band gap devices
- High frequency power conversion
- Medium voltage power conversion
- Design optimization
- Pulsewidth modulation
- Inductive power components
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Wide bandgap materials such as Silicon Carbide (SiC) has enabled the use of medium voltage unipolar devices like Metal-Oxide Field Effect Transistors (MOSFETs) and Junction Field Effect Transistors (JFETs), which can switch ...
Design Considerations and Development of an Innovative Gate Driver for Medium Voltage Power Devices with High dv/dt Medium Voltage (MV) Silicon Carbide (SiC) devices have opened up new areas of applications which were previously dominated by silicon based IGBTs. From the perspective of a power converter design, the development of MV SiC ...