Gohil, Ghanshyamsinh V.
Browse by
Ghanshyamsinh Gohil is Assistant Professor of Electrical and Computer Engineering and head of the Power Electronics Lab. His research interests include:
- Power electronics
- Wide-band gap devices
- Micro-grid
- High frequency power conversion
- Medium voltage power conversion
- Design optimization
- Pulsewidth modulation
- Inductive power components
ORCID page
Works in Treasures @ UT Dallas are made available exclusively for educational purposes such as research or instruction. Literary rights, including copyright for published works held by the creator(s) or their heirs, or other third parties may apply. All rights are reserved unless otherwise indicated by the copyright owner(s).
Recent Submissions
-
Benchmarking and Qualification of Gate Drivers for Medium Voltage (MV) Operation Using 10 Kv Silicon Carbide (SiC) Mosfets
(Institute of Electrical and Electronics Engineers Inc., 2019-03)Emergence of reliable medium voltage (MV) silicon carbide (SiC) devices, has made it possible to use these for MV applications, including grid interconnections, and medium voltage drives system. In a converter structure, ... -
Static and Dynamic Characterization of a 3.3 kV, 45 A 4H-SiC MOSFET
Wide bandgap materials such as Silicon Carbide (SiC) has enabled the use of medium voltage unipolar devices like Metal-Oxide Field Effect Transistors (MOSFETs) and Junction Field Effect Transistors (JFETs), which can switch ... -
Design Considerations and Development of an Innovative Gate Driver for Medium Voltage Power Devices with High dv/dt
Medium Voltage (MV) Silicon Carbide (SiC) devices have opened up new areas of applications which were previously dominated by silicon based IGBTs. From the perspective of a power converter design, the development of MV SiC ...
RSS 1.0