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dc.contributor.authorAvila-Avendano, Jesus Alberto
dc.contributor.authorQuevedo-López, Manuel A.
dc.contributor.authorYoung, Chadwin D.
dc.date.accessioned2019-06-28T18:24:20Z
dc.date.available2019-06-28T18:24:20Z
dc.date.created2018-02-28
dc.identifier.issn0003-6951
dc.identifier.urihttps://hdl.handle.net/10735.1/6627
dc.description.abstractThe I-V and C-V characteristics of CdTe/CdS heterojunctions deposited in-situ by Pulsed Laser Deposition (PLD) were evaluated. In-situ deposition enables the study of the CdTe/CdS interface by avoiding potential impurities at the surface and interface as a consequence of exposure to air. The I-V and C-V characteristics of the resulting junctions were obtained at different temperatures, ranging from room temperature to 150 °C, where the saturation current (from 10⁻⁸ to 10⁻⁴A/cm²), ideality factor (between 1 and 2), series resistance (from 10² to 10⁵ Ω), built-in potential (0.66-0.7 V), rectification factor (∼10⁶), and carrier concentration (∼10¹⁶ cm⁻³) were obtained. The current-voltage temperature dependence study indicates that thermionic emission is the main transport mechanism at the CdTe/CdS interface. This study also demonstrated that the built-in potential (V_{bi}) calculated using a thermionic emission model is more accurate than that calculated using C-V extrapolation since C-V plots showed a V_{bi} shift as a function of frequency. Although CdTe/CdS is widely used for photovoltaic applications, the parameters evaluated in this work indicate that CdTe/CdS heterojunctions could be used as rectifying diodes and junction field effect transistors (JFETs). JFETs require a low PN diode saturation current, as demonstrated for the CdTe/CdS junction studied here. © 2018 Author(s).
dc.description.sponsorshipNSF CAREER Award under the NSF Award ECCS-1653343
dc.language.isoen
dc.publisherAmerican Institute of Physics Inc
dc.relation.urihttp://dx.doi.org/10.1063/1.5008753
dc.rights©2018 The Authors. This article may be downloaded for personal use only. Any other use requires proper permission of the author and AIP Publishing.
dc.subjectCadmium telluride
dc.subjectPulsed laser deposition
dc.subjectElectric current rectifiers
dc.subjectElectric resistance
dc.subjectField-effect transistors
dc.subjectHeterojunctions
dc.subjectSemiconductors
dc.subjectTemperature distribution
dc.subjectThermionic emission
dc.titleElectrical Characterization of the Temperature Dependence in CdTe/CdS Heterojunctions Deposited In-Situ by Pulsed Laser Deposition
dc.type.genrearticle
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationAvila-Avendano, J., M. Quevedo-Lopez, and C. Young. 2018. "Electrical characterization of the temperature dependence in CdTe/CdS heterojunctions deposited in-situ by pulsed laser deposition." Applied Physics Letters 112(9), doi: 10.1063/1.5008753
dc.source.journalApplied Physics Letters
dc.identifier.volume112
dc.identifier.issue9
dc.contributor.utdAuthorAvila-Avendano, Jesus Alberto
dc.contributor.utdAuthorQuevedo-López, Manuel A.
dc.contributor.utdAuthorYoung, Chadwin D.
dc.contributor.ORCID0000-0003-0690-7423 (Young, CD)


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