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dc.contributor.authorMattson, Eric C.
dc.contributor.authorCabrera, Yasiel
dc.contributor.authorRupich, Sara M.
dc.contributor.authorWang, Yuxuan
dc.contributor.authorOyekan, Kolade A.
dc.contributor.authorMustard, T. J.
dc.contributor.authorHalls, M. D.
dc.contributor.authorBechtel, H. A.
dc.contributor.authorMartin, M. C.
dc.contributor.authorChabal, Yves J.
dc.date.accessioned2019-07-12T20:23:18Z
dc.date.available2019-07-12T20:23:18Z
dc.date.created2018-08-06
dc.identifier.issn0897-4756
dc.identifier.urihttps://hdl.handle.net/10735.1/6693
dc.descriptionSupplementary material available on publisher's website.
dc.descriptionFull text access from Treasures at UT Dallas is restricted to current UTD affiliates (use the provided link to the article). Non UTD affiliates will find the web address for this item by clicking the Show full item record link and copying the "relation.uri" metadata.
dc.description.abstractThe potential implementation of extreme ultraviolet (EUV) lithography into next generation device processing is bringing urgency to identify resist materials that optimize EUV lithographic performance. Inorganic/organic hybrid nanoparticles or clusters constitute a promising new class of materials, with high EUV sensitivity from the core and tunable chemistry through the coordinating ligands. Development of a thorough mechanistic understanding of the solubility switching reactions in these materials is an essential first step toward their implementation in patterning applications but remains challenging due to the complexity of their structures, limitations in EUV sources, and lack of rigorous in situ characterization. Here, we report a mechanistic investigation of the solubility switching reactions in hybrid clusters comprising a small HfOx core capped with a methacrylic acid ligand shell (HfMAA). We show that EUV-induced reactions can be studied by performing in situ infrared (IR) spectroscopy of electron-irradiated films using a variable energy electron gun. Combining additional ex situ metrology, we track the chemical evolution of the material at each stage of a typical resist processing sequence. For instance, we find that a cross-linking reaction initiated by decarboxylation of the methacrylate ligands under electron irradiation constitutes the main solubility switching mechanism, although there are also chemical changes imparted by a typical post application bake (PAB) step alone. Lastly, synchrotron-based IR microspectroscopy measurements of EUV-irradiated HfMAA films enable a comparison of reactions induced by EUV vs electron beam irradiation of the same resist material, yielding important insight into the use of electron beam irradiation as an experimental model for EUV exposure.
dc.description.sponsorshipUS Dept. of Energy DE-AC02-05CH11231.
dc.language.isoen
dc.publisherAmerican Chemical Society
dc.relation.urihttp://dx.doi.org/10.1021/acs.chemmater.8b03149
dc.rights©2018 American Chemical Society.
dc.subjectCarboxylic acids
dc.subjectElectron beams
dc.subjectElectron gun
dc.subjectElectrons
dc.subjectExtreme ultraviolet lithography
dc.subjectHafnium
dc.subjectHafnium compounds
dc.subjectHybrid materials
dc.subjectLigands
dc.subjectLight sources
dc.subjectPhotoresists
dc.subjectSolubility
dc.titleChemical Modification Mechanisms in Hybrid Hafnium Oxo-Methacrylate Nanocluster Photoresists for Extreme Ultraviolet Patterning
dc.type.genrearticle
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationMattson, E. C., Y. Cabrera, S. M. Rupich, Y. Wang, et al. 2018. "Chemical Modification Mechanisms in Hybrid Hafnium Oxo-methacrylate Nanocluster Photoresists for Extreme Ultraviolet Patterning." Chemistry of Materials 30(17): 6192-6206, doi:10.1021/acs.chemmater.8b03149
dc.source.journalChemistry of Materials
dc.identifier.volume30
dc.identifier.issue17
dc.contributor.utdAuthorMattson, Eric C.
dc.contributor.utdAuthorCabrera, Yasiel
dc.contributor.utdAuthorRupich, Sara M.
dc.contributor.utdAuthorWang, Yuxuan
dc.contributor.utdAuthorOyekan, Kolade A.
dc.contributor.utdAuthorChabal, Yves J.


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