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dc.contributor.authorRai, A.
dc.contributor.authorPark, J. H.
dc.contributor.authorZhang, Chenxi
dc.contributor.authorKwak, I.
dc.contributor.authorWolf, S.
dc.contributor.authorVishwanath, S.
dc.contributor.authorLin, X.
dc.contributor.authorFurdyna, J.
dc.contributor.authorXing, H. G.
dc.contributor.authorCho, Kyeongjae
dc.contributor.authorKummel, A. C.
dc.contributor.authorBanerjee, S. K.
dc.date.accessioned2019-07-12T20:26:34Z
dc.date.available2019-07-12T20:26:34Z
dc.date.created2018-06-24
dc.identifier.isbn9781538630280
dc.identifier.urihttps://hdl.handle.net/10735.1/6695
dc.descriptionFull text access from Treasures at UT Dallas is restricted to current UTD affiliates (use the provided link to the article). Non UTD affiliates will find the web address for this item by clicking the Show full item record link and copying the "relation.uri" metadata.
dc.description.abstractDefect engineering of 2D semiconducting transition metal dichalcogenides (TMDCs) has been demonstrated to be a promising way to tune both their bandgaps and carrier concentrations. Moreover, controlled introduction of defects in the source/drain access regions of a TMDC FET can boost its performance by decreasing the contact resistance at the metallTMDC interface [1]. While chemical functionalization offers a facile route towards defect engineering in 2D TMDCs, several chemically-treated TMDCs have not been fully understood at the molecular level. In this study, chemical sulfur treatment (ST) utilizing ammonium sulfide [(NH4)2S] solution is shown to enhance the p-type behavior in 2D WSe2 via introduction of acceptor defect states near its valence band edge (VBE), with the results verified using detailed scanning tunneling microscopy (STM)/spectroscopy (STS) studies, field-effect transistor (FET) measurements and theoretical density-of-states (DOS) calculations.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.isPartOfDevice Research Conference, 2018
dc.relation.urihttp://dx.doi.org/10.1109/DRC.2018.8442266
dc.rights©2018 IEEE
dc.subjectSemiconductors--Defects
dc.subjectField-effect transistors
dc.subjectScanning tunneling microscopy
dc.subjectSelenium compounds
dc.subjectSulfur compounds
dc.subjectTransition metals
dc.subjectSulfides—Ammonium
dc.subjectTungsten compounds
dc.titleEnhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering
dc.type.genrearticle
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationRai, A., J. H. Park, C. Zhang, I. Kwak, et al. 2018. "Enhanced P-Type Behavior in 2D WSe2 via chemical defect engineering." Device Research Conference 76, doi:10.1109/DRC.2018.8442266
dc.identifier.volume76
dc.contributor.utdAuthorZhang, Chenxi
dc.contributor.utdAuthorCho, Kyeongjae
dc.contributor.VIAF369148996084659752200 (Cho, K)
dc.contributor.ORCID0000-0003-2698-7774 (Cho, K)


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