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dc.contributor.authorLaturia, Akash A.
dc.contributor.authorVan De Put, Maarten L.
dc.contributor.authorFischetti, Massimo V.
dc.contributor.authorVandenberghe, William G.
dc.date.accessioned2019-07-26T17:01:54Z
dc.date.available2019-07-26T17:01:54Z
dc.date.created2018-06-24
dc.identifier.isbn9781538630280 (ISBN)
dc.identifier.urihttps://hdl.handle.net/10735.1/6729
dc.descriptionFull text access from Treasures at UT Dallas is restricted to current UTD affiliates (use the provided Link to Article).
dc.description.abstractOne-dimensional (1D) materials present the ultimate limit of extremely scaled devices by virtue of their spatial dimensions and the excellent electrostatic gate control in the transistors based on these materials. Among 1D materials, graphene nanoribbon (a-GNR) prove to be very promising due to high carrier mobility and the prospect of reproducible fabrication process [1]. Two popular approaches to study atomistically the electronic properties expand the wavefunction on either a plane-wave basis set, or through the linear combination of localized atomic orbitals. The use of localized orbitals, especially in the tight-binding (TB) approximation, enables highly scalable numerical implementations. Through continuous improvements in methods and computational capabilities, atomistically describing electronic transport in devices containing more than thousands of atoms has become feasible. Plane waves, while not as scalable, are very popular as the basis of accurate ab-initio software [2]. However, for modeling of transport through larger devices, the computational burden prohibits the direct use of a plane wave basis [3]. Here, we demonstrate a study of the transport characteristics of nanoribbon-based devices using a hybrid approach that combines the benefits of plane waves while retaining the efficiency provided by the TB approximation. © 2018 IEEE.
dc.description.sponsorshipNSF Grant No. 1710066.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.isPartOfDevice Research Conference, 76th
dc.relation.urihttp://dx.doi.org/10.1109/DRC.2018.8442279
dc.rights©2018 IEEE
dc.subjectElastic waves
dc.subjectElectrons
dc.subjectQuantum chemistry
dc.subjectAtomic orbitals
dc.subjectElectric currents
dc.subjectGraphene
dc.titleModeling of Electron Transport in Nanoribbon Devices Using Bloch Waves
dc.type.genrearticle
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationLaturia, A. A., M. L. Van De Put, M. V. Fischetti, and W. G. Vandenberghe. 2018. "Modeling of electron transport in nanoribbon devices using Bloch waves." Device Research Conference, 76th, doi:10.1109/DRC.2018.8442279
dc.identifier.volume2018
dc.contributor.utdAuthorLaturia, Akash A.
dc.contributor.utdAuthorVan De Put, Maarten L.
dc.contributor.utdAuthorFischetti, Massimo V.
dc.contributor.utdAuthorVandenberghe, William G.
dc.contributor.VIAF21146635654041982414 (Vandenberghe, WG)
dc.contributor.ORCID0000-0001-5926-0200 (Fischetti, MV)


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