Now showing items 1-4 of 4

    • Spice-Only Model for Spin-Transfer Torque Domain Wall MTJ Logic 

      Hu, Xuan; Timm, Andrew; Brigner, Wesley H.; Incorvia, J. A. C.; Friedman, Joseph S. (Institute of Electrical and Electronics Engineers Inc., 2019 IEEE)
      The spin-transfer torque domain wall (DW) magnetic tunnel junction (MTJ) enables spintronic logic circuits that can be directly cascaded without deleterious signal conversion circuitry and is one of the only spintronic ...
    • Overhead Requirements for Stateful Memristor Logic 

      Hu, Xuan; Schultis, Michael J.; Kramer, Matthew; Bagla, Archit; Shetty, Akshay; Friedman, Joseph S. (IEEE-Institute of Electrical Electronics Engineers Inc, 2019-01)
      Memristors are being explored as a potential technology to replace CMOS for logic-in-memory systems that exploit the memristive non-volatility. Memristors are two-terminal, non-volatile device that exhibit a variable ...
    • Graded-Anisotropy-Induced Magnetic Domain Wall Drift for an Artificial Spintronic Leaky Integrate-and-Fire Neuron 

      Brigner, Wesley H.; Hu, Xuan; Hassan, Naimul; Bennett, C. H.; Incorvia, J. A. C.; Garcia-Sanchez, F.; Friedman, Joseph S. (Institute of Electrical and Electronics Engineers Inc., 2019-03-11)
      Spintronic three-terminal magnetic-tunnel-junction (3T-MTJ) devices have gained considerable interest in the field of neuromorphic computing. Previously, these devices required external circuitry to implement the leaking ...
    • Overhead Requirements for Stateful Memristor Logic 

      Hu, Xuan; Schultis, Michael J.; Kramer, Matthew; Bagla, Archit; Shetty, Akshay; Friedman, Joseph S.
      Memristors are being explored as a potential technology to replace CMOS for logic-in-memory systems that exploit the memristive non-volatility. Memristors are two-terminal, non-volatile device that exhibit a variable ...