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Graded-Anisotropy-Induced Magnetic Domain Wall Drift for an Artificial Spintronic Leaky Integrate-and-Fire Neuron
(Institute of Electrical and Electronics Engineers Inc., 2019-03-11)
Spintronic three-terminal magnetic-tunnel-junction (3T-MTJ) devices have gained considerable interest in the field of neuromorphic computing. Previously, these devices required external circuitry to implement the leaking ...
Overhead Requirements for Stateful Memristor Logic
(IEEE-Institute of Electrical Electronics Engineers Inc, 2019-01)
Memristors are being explored as a potential technology to replace CMOS for logic-in-memory systems that exploit the memristive non-volatility. Memristors are two-terminal, non-volatile device that exhibit a variable ...