O, Kenneth K.

Permanent URI for this collectionhttps://hdl.handle.net/10735.1/6797

Kenneth K. O is Professor of Electrical Engineering and holder of the Texas Instruments Distinguished Chair. He also serves as Director of the Texas Analog Center of Excellence, which is funded by the Semiconductor Research Corporation, The State of Texas, Texas Instruments, The UT System and UT Dallas. His research interests include:

  • Electronic Circuits
  • RF and Microwave Circuits
  • Solid-State Devices and Micro Systems Fabrication
  • RF Integrated Circuits
  • Devices and Technology
  • Silicon Integrated Devices and Circuits Operating up to 60 THz

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Recent Submissions

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    Functional Performance of a Millimeter Wave Square Holey Dielectric Waveguide
    (IEEE, 2019-01-20) Aflakian, N.; Gomez, Michael; Miller, C.; Henderson, Rashaunda; MacFarlane, D.; O, Kenneth K.; Gomez, Michael; Miller, C.; Henderson, Rashaunda; O, Kenneth K.
    This paper presents the functional performance of a square holey dielectric waveguide that operates from 180 to 360 GHz for supporting high data rate communication systems. A 7 cm waveguide is excited using a microstrip patch antenna at 264 GHz and shows 30 dB improvement from the system noise floor and 12 dB improvement from a free space transmission in an uncalibrated measurement. This waveguide minimizes cross talk and allows for polarization division multiplexing supporting vertical and horizontal polarizations.
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    Design and Demonstration of Antenna-Coupled Schottky Diodes in a Foundry Complementary Metal-Oxide Semiconductor Technology for Electronic Detection of Far-Infrared Radiation
    (American Institute of Physics Inc., 2019-05-16) Ahmad, Z.; Lisauskas, A.; Roskos, H. G.; O, Keneth K.; O, Keneth K.
    Electronic detection of far-infrared (FIR) radiation up to 9.74 THz is reported in a foundry complementary metal-oxide semiconductor (CMOS) technology. The detectors were fabricated with Schottky-barrier diodes (SBDs) formed in 130-nm CMOS without any process modifications. Direct-antenna matched detectors achieve a measured peak optical responsivity (R V ) of 383 and 25 V/W at 4.92 and 9.74 THz, respectively, near the 5 and 10 THz fundamental frequency of the antennas. A significantly improved R V at 9.74 THz (25× compared to the MOSFET detectors and ~2× compared to the SBD) ensures negligible impact on the system noise-equivalent power (NEP) due to the input-referred noise of the amplifier following the detector. This work also demonstrated that by incorporating the effects of plasma resonance, transit time, and FIR absorption behavior of SiO 2 , as well as the 3D electromagnetic simulations into the SBD model, good agreement between the measurements and simulations can be attained. The detector designed for a 10-THz operation achieves an optical NEP of 1.1 nW/vHz at 9.74 THz in the shot-noise limit, which is comparable to that of commercially available pyro-detectors that are 50 000× larger. © 2019 Author(s).
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    On-Chip High Impedance RMS Voltage Measurements at 265-300 GHz
    (Institute of Electrical and Electronics Engineers Inc.) Kshattry, Sandeep; O, Kenneth K.; Kshattry, Sandeep; O, Kenneth K.
    A wideband (265-300 GHz) and high impedance root-mean-square (RMS) detector for on-chip voltage measurements is demonstrated in a 45-nm bulk CMOS process. The detector responsivity is ~70V/W at 10-nA bias. Adding the detector increases the loss of a 140-µm long GCPW thru structure by less than 0.2 dB up to 300 GHz. The compact RMS detectors are placed under a grounded coplanar waveguide feed to a patch antenna with virtually no area penalty, and used to measure the standing wave voltages. The minimum detectable signal of detector is ~37 dBm with a dynamic range of ~40 dB.

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