High Thermal Conductivity in Isotopically Enriched Cubic Boron Phosphide
Huang, P. Y.
Broido, D. A.
Cahill, D. G.
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Zinc blende boron arsenide (BAs), boron phosphide (BP), and boron nitride (BN) have attracted significant interest in recent years due to their high thermal conductivity (Λ) predicted by first-principles calculations. This research reports the study of the temperature dependence of Λ (120 K < T < 600 K) for natural isotope-abundance BP and isotopically enriched 11BP crystals grown from modified flux reactions. Time-domain thermoreflectance is used to measure Λ of sub-millimeter-sized crystals. At room temperature, Λ for BP and 11BP is 490 and 540 W m−1 K−1, respectively, surpassing the values of conventional high Λ materials such as Ag, Cu, BeO, and SiC. The Λ of BP is smaller than only cubic BN, diamond, graphite, and BAs among single-phase materials. The measured Λ for BP and 11BP is in good agreement with the first-principles calculations above 250 K. The quality of the crystals is verified by Raman spectroscopy, X-ray diffraction, and scanning transmission electron microscopy. By combining the first-principles calculations and Raman measurements, a previously misinterpreted Raman mode is reassigned. Thus, BP is a promising material not only for heat spreader applications in high-power microelectronic devices but also as an electronic material for use in harsh environments. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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