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dc.contributor.authorAhmad, Z.
dc.contributor.authorLisauskas, A.
dc.contributor.authorRoskos, H. G.
dc.contributor.authorO, Keneth K.
dc.date.accessioned2020-01-29T20:47:23Z
dc.date.available2020-01-29T20:47:23Z
dc.date.issued2019-05-16
dc.identifier.issn0021-8979
dc.identifier.urihttp://dx.doi.org/10.1063/1.5083689
dc.identifier.urihttps://hdl.handle.net/10735.1/7206
dc.description.abstractElectronic detection of far-infrared (FIR) radiation up to 9.74 THz is reported in a foundry complementary metal-oxide semiconductor (CMOS) technology. The detectors were fabricated with Schottky-barrier diodes (SBDs) formed in 130-nm CMOS without any process modifications. Direct-antenna matched detectors achieve a measured peak optical responsivity (R V ) of 383 and 25 V/W at 4.92 and 9.74 THz, respectively, near the 5 and 10 THz fundamental frequency of the antennas. A significantly improved R V at 9.74 THz (25× compared to the MOSFET detectors and ~2× compared to the SBD) ensures negligible impact on the system noise-equivalent power (NEP) due to the input-referred noise of the amplifier following the detector. This work also demonstrated that by incorporating the effects of plasma resonance, transit time, and FIR absorption behavior of SiO 2 , as well as the 3D electromagnetic simulations into the SBD model, good agreement between the measurements and simulations can be attained. The detector designed for a 10-THz operation achieves an optical NEP of 1.1 nW/vHz at 9.74 THz in the shot-noise limit, which is comparable to that of commercially available pyro-detectors that are 50 000× larger. © 2019 Author(s).
dc.language.isoen
dc.publisherAmerican Institute of Physics Inc.
dc.rights©2019 The Authors
dc.subjectMetallic oxides
dc.subjectPlasma waves
dc.subjectDiodes, Schottky-barrier
dc.subjectRadiation
dc.subjectInfrared imaging
dc.subjectAntennas (Electronics)
dc.subjectIntegrated circuits--Very large scale integration
dc.subjectElectromagnetic waves
dc.subjectSemiconductors
dc.titleDesign and Demonstration of Antenna-Coupled Schottky Diodes in a Foundry Complementary Metal-Oxide Semiconductor Technology for Electronic Detection of Far-Infrared Radiation
dc.type.genrearticle
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.description.departmentTexas Analog Center of Excellence
dc.identifier.bibliographicCitationAhmad, Z., A. Lisauskas, and H. G. Roskos. 2019. "Design and demonstration of antenna-coupled Schottky diodes in a foundry complementary metal-oxide semiconductor technology for electronic detection of far-infrared radiation." Journal of Applied Physics 125(19): art. 194501, doi: 10.1063/1.5083689
dc.source.journalJournal of Applied Physics
dc.identifier.volume125
dc.contributor.utdAuthorO, Keneth K.


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