Threshold Voltage Modulation of a Graphene–ZnO Barristor Using a Polymer Doping Process
Kim, S. -Y
Kim, Y. J.
Hwang, H. J.
Ham, M. -H
Lee, B. H.
MetadataShow full item record
A method to modulate the threshold voltage of a graphene–ZnO barristor is investigated. Two types of polymers, polyethyleneimine (as an n-type dopant) and poly(acrylic acid) (as a p-type dopant), are used to pre-set the initial Fermi level of the graphene. The threshold voltage of the graphene barristor can be modulated between −2.0 V (n-type graphene) and 1.2 V (p-type graphene) while modulating the Fermi level of the graphene by 120 meV. This process provides a scalable and facile method to adjust the threshold voltage of graphene–semiconductor junction-based devices, which is a crucial function required to implement graphene-based electronic devices in integrated circuits. ©2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Due to copyright restrictions and/or publisher's policy full text access from Treasures at UT Dallas is limited to current UTD affiliates (use the provided Link to Article).