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    The Band Structure Change of Hf₀.₅Zr₀.₅O₂/Ge System upon Post Deposition Annealing

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    Date
    2019-05-25
    Author
    Feng, Z.
    Peng, Y.
    Liu, H.
    Sun, Y.
    Wang, Y.
    Meng, M.
    Liu, H.
    Wang, J.
    Wu, R.
    Wang, Xinglu
    Cho, Kyeongjae
    Han, G.
    Dong, H.
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    Abstract
    Abstract
    Hafnium zirconium oxide films have been utilized in negative capacitance (NC) field-effect transistors (FETs). The band alignment of semiconductor and HfZrOₓ film is critical to obtain high device performance. The band alignment of Hf₀.₅Zr₀.₅O₂/SiOₓ/Ge system before and after post deposition annealing at 500 °C is studied via angle resolved X-ray photoelectron spectroscopy, synchrotron radiation photoemission spectroscopy and UV–Visible spectroscopy. The band gap of Hf₀.₅Zr₀.₅O₂ is seen narrowed 0.27 ± 0.05 eV, and the valence band offset between Hf₀.₅Zr₀.₅O₂ and Ge decreases 0.25 eV ± 0.05 eV after PDA at 500 °C. Therefore, the conduction band offset is nearly unchanged. This work gives insights into the interface physics about Hf₀.₅Zr₀.₅O₂/SiOₓ and is valuable for Ge-based NC pFETs. ©2019 Elsevier B.V.
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    Supplementary material is available on publisher's website. Use the DOI link below.
    URI
    http://dx.doi.org/10.1016/j.apsusc.2019.05.282
    https://hdl.handle.net/10735.1/7389
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    • Cho, Kyeongjae

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