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dc.contributor.authorMyers, K. J.
dc.contributor.authorWaskiewicz, R. J.
dc.contributor.authorLenahan, P. M.
dc.contributor.authorYoung, Chadwin D.
dc.date.accessioned2020-06-18T21:38:28Z
dc.date.available2020-06-18T21:38:28Z
dc.date.issued2018-11-09
dc.identifier.issn0018-9499
dc.identifier.urihttp://dx.doi.org/10.1109/TNS.2018.2880119
dc.identifier.urihttps://hdl.handle.net/10735.1/8676
dc.descriptionDue to copyright restrictions and/or publisher's policy full text access from Treasures at UT Dallas is limited to current UTD affiliates (use the provided Link to Article).
dc.description.abstractThe role of specific atomic-scale defects involved in total ionizing dose radiation in the metal-oxide-semiconductor field-effect transistors of the 1980s and 1990s was identified in large part with electron paramagnetic resonance (EPR) techniques. The techniques involved in those studies were classical EPR and, to a lesser extent, electrically detected magnetic resonance (EDMR). We show that somewhat more sophisticated resonance-based measurements can be fruitfully applied to explore the atomic-scale basic mechanisms of the significantly more complex, generally messier, and much smaller devices of the present day. We present multifield and frequency EDMR measurements in which the response is observed via spin-dependent leakage currents, spin-dependent charge pumping, and spin-dependent gated diode recombination currents. We also exploit isotopic substitution, replacing hydrogen with deuterium, monitoring the isotopic effects on the resonance response. The approaches utilized in this paper should be applicable to radiation damage studies in a wide variety of emerging materials and devices.
dc.language.isoen
dc.publisherIEEE-Institute of Electrical and Electronics Engineers Inc
dc.rights©2018 IEEE
dc.subjectDielectric devices
dc.subjectElectron paramagnetic resonance (epr)
dc.subjectFin Field-effect transistors
dc.subjectMetal oxide semiconductor field-effect transistors
dc.subjectElectron paramagnetic resonance
dc.subjectSilica
dc.subjectGamma rays
dc.subjectIsotopes
dc.subjectMagnetic resonance
dc.titleA Multifield and Frequency Electrically Detected Magnetic Resonance Study of Atomic-Scale Defects in Gamma Irradiated Modern MOS Integrated Circuitry
dc.type.genrearticle
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationMyers, K. J., R. J. Waskiewicz, P. M. Lenahan, and C. D. Young. 2019. "A Multifield and Frequency Electrically Detected Magnetic Resonance Study of Atomic-Scale Defects in Gamma Irradiated Modern MOS Integrated Circuitry." IEEE Transactions on Nuclear Science 66(1): 405-412, doi: 10.1109/TNS.2018.2880119
dc.source.journalIEEE Transactions on Nuclear Science
dc.identifier.volume66
dc.identifier.issue1
dc.contributor.utdAuthorYoung, Chadwin D.
dc.contributor.ORCID0000-0003-0690-7423 (Young, CD)


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