Odd-Integer Quantum Hall States and Giant Spin Susceptibility in P -Type Few-Layer WSe₂

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dc.contributor.authorXu, S.en_US
dc.contributor.authorShen, J.en_US
dc.contributor.authorLong, G.en_US
dc.contributor.authorWu, Z.en_US
dc.contributor.authorBao, Zhi-qiangen_US
dc.contributor.authorLiu, Cheng-Chengen_US
dc.contributor.authorXiao, X.en_US
dc.contributor.authorHan, T.en_US
dc.contributor.authorLin, J.en_US
dc.contributor.authorWu, Y.en_US
dc.contributor.authorLu, H.en_US
dc.contributor.authorHou, J.en_US
dc.contributor.authorAn, L.en_US
dc.contributor.authorWang, Y.en_US
dc.contributor.authorCai, Y.en_US
dc.contributor.authorHo, K. M.en_US
dc.contributor.authorHe, Y.en_US
dc.contributor.authorLortz, R.en_US
dc.contributor.authorZhang, Fanen_US
dc.contributor.authorWang, N.en_US
dc.contributor.utdAuthorBao, Zhi-qiangen_US
dc.contributor.utdAuthorLiu, Cheng-Chengen_US
dc.contributor.utdAuthorZhang, Fanen_US
dc.date.accessioned2018-09-24T15:42:55Z
dc.date.available2018-09-24T15:42:55Z
dc.date.created2017-02-10
dc.date.issued2017-02-10en_US
dc.descriptionIncludes supplementary materialen_US
dc.description.abstractWe fabricate high-mobility p-type few-layer WSe₂ field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level crossing effects at ultralow coincident angles, revealing that the Zeeman energy is about 3 times as large as the cyclotron energy near the valence band top at the Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe₂, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe₂ offers a unique platform with unusually heavy hole carriers and a substantially enhanced g factor for exploring strongly correlated phenomena.en_US
dc.description.departmentSchool of Natural Sciences and Mathematicsen_US
dc.description.sponsorshipResearch Grants Council of Hong Kong (Projects No. 16302215, No. HKU9/CRF/13G, No. 604112, and No. N_HKUST613/12); NSF Grant No. PHY11-25915.en_US
dc.identifier.bibliographicCitationXu, S., J. Shen, G. Long, Z. Wu, et al. 2017. "Odd-integer quantum hall states and giant spin susceptibility in p -type few-layer WSe₂." Physical Review Letters 118(6), doi:10.1103/PhysRevLett.118.067702en_US
dc.identifier.issn0031-9007en_US
dc.identifier.issue6en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/6127
dc.identifier.volume118en_US
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevLett.118.067702
dc.rights©2017 American Physical Society.en_US
dc.sourcePhysical Review Letters
dc.subjectMagnetic fieldsen_US
dc.subjectMagnetic susceptibilityen_US
dc.subjectQuantum Hall effecten_US
dc.subjectQuantum theoryen_US
dc.subjectCyclotronsen_US
dc.subjectLandau levelsen_US
dc.subjectField-effect transistorsen_US
dc.subjectTungsten(IV) Selenideen_US
dc.titleOdd-Integer Quantum Hall States and Giant Spin Susceptibility in P -Type Few-Layer WSe₂en_US
dc.type.genrearticleen_US

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