Impact of Threshold Voltage Instability on Static and Switching Performance of GaN Devices with p-GaN Gate

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dc.contributor.ORCID0000-0001-6912-7219 (Akin, B)
dc.contributor.authorYang, Fei
dc.contributor.authorXu, Chi
dc.contributor.authorAkin, Bilal
dc.contributor.utdAuthorYang, Fei
dc.contributor.utdAuthorXu, Chi
dc.contributor.utdAuthorAkin, Bilal
dc.date.accessioned2020-04-03T21:09:51Z
dc.date.available2020-04-03T21:09:51Z
dc.date.issued2019-03-17
dc.descriptionDue to copyright restrictions and/or publisher's policy full text access from Treasures at UT Dallas is limited to current UTD affiliates (use the provided Link to Article).
dc.description.abstractThe p-GaN gate technology has been adopted to realize enhancement-mode GaN devices. However, the blocking voltage can cause the threshold voltage to drift in p-GaN devices In this paper, the impact of the threshold voltage instability on the static and switching performance of the p-GaN device is studied. Specifically, a Vₜₕ measurement circuit is first designed which is able to characterize the threshold voltage after applying a minimum high voltage pulse of 2 μs. From the experimental result, an increase of more than 0.7 V in Vₜₕ is observed within several μs after blocking the high voltage. The static characteristics of the same device are compared before and after blocking the high voltage, and a reduced knee point in the output characteristic is observed at a low gate-to-source voltage. Due to the static characteristic variation, the switching performance of the device is also changed after stressed with the high drain-to-source voltage. Specifically, from the double pulse test result at 400 V/25 A with R₉ =20 Ω, more than 20% increase of turn-on loss is recognized after blocking the high voltage for 30 minutes. The turn on loss difference is minimized when the gate resistance value is reduced to 0 Ω. For the turn-off loss, the impact of Vₜₕ's shift is negligible. Detailed analysis is also provided to explain the experimental result. It is concluded that higher gate drive voltage and lower gate resistance helps to minimize the threshold voltage instability's effect on the device's performance. © 2019 IEEE.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationYang, F., C. Xu, and B. Akin. 2019. "Impact of threshold voltage instability on static and switching performance of GaN devices with p-GaN gate." IEEE Applied Power Electronics Conference and Exposition 2019: 951-957, doi: 10.1109/APEC.2019.8722163
dc.identifier.issn9781538683309
dc.identifier.urihttp://dx.doi.org/10.1109/APEC.2019.8722163
dc.identifier.urihttps://hdl.handle.net/10735.1/7817
dc.identifier.volume2019
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.isPartOfIEEE Applied Power Electronics Conference and Exposition
dc.rights©2019 IEEE
dc.subjectGallium nitride
dc.subjectSwitching circuits
dc.subjectSemiconductors
dc.subjectPower electronics
dc.subjectStability
dc.subjectElectromotive force
dc.subjectComputers—Circuits
dc.subjectModulation-doped field-effect transistors
dc.subjectWide gap semiconductors
dc.titleImpact of Threshold Voltage Instability on Static and Switching Performance of GaN Devices with p-GaN Gate
dc.type.genrearticle

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