Modeling and Experimental Verification of Aging Process in Wide Bandgap Devices

Date

2019-05

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Abstract

Time dependent dielectric breakdown (TDDB) is the leading cause of MOSFET failure in the field. Currently, the only information circuit designers are provided with on this aging mechanism is the gate voltage rating on the device’s data sheet. Creating device-specific models for aging can allow for more accurate predictions of lifetime during operation in converters and motor drives. This work aims to evaluate the use of finite element numerical modeling for the estimation of SiC MOSFET aging due to electrical stress.

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Keywords

Silicon carbide, Metal oxide semiconductor field-effect transistors, Reliability (Engineering), Service life (Engineering), Breakdown (Electricity)

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©2019 Mark W. Ditsworth

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