Negative Differential Transconductance in Silicon Quantum Well Metal-Oxide-Semiconductor Field Effect/Bipolar Hybrid Transistors

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dc.contributor.authorNaquin, Clinten_US
dc.contributor.authorLee, Marken_US
dc.contributor.authorEdwards, H.en_US
dc.contributor.authorMathur, G.en_US
dc.contributor.authorChatterjee, T.en_US
dc.contributor.authorMaggio, K.en_US
dc.date.accessioned2015-01-13T20:23:32Z
dc.date.available2015-01-13T20:23:32Z
dc.date.created2014-11-25en_US
dc.date.issued2014-11-25en_US
dc.description.abstractIntroducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (VG). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures > 200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on VG that reduces drain-source current through the QW. These devices establish the feasibility of exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.en_US
dc.description.sponsorshipUS National Science Foundation (grant no. ECCS-1403421) and Semiconductor Research Corporation through the Texas Analog Center of Excellence Task 1836.145.en_US
dc.identifier.bibliographicCitationNaquin, C., M. Lee, H. Edwards, G. Mathur, et al. 2014. "Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors." Applied Physics Letters 105: 213507-1 to -4.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.issue21en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/4260
dc.identifier.volume105en_US
dc.publisherAmerican Institute Of Physics Inc.en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4902919
dc.rights©2014 AIP Publishing LLCen_US
dc.sourceApplied Physics Letters
dc.subjectSemiconductorsen_US
dc.subjectQuantum wellsen_US
dc.subjectMetal oxide semiconductor field-effect transistorsen_US
dc.subjectSiliconen_US
dc.subjectTransconductanceen_US
dc.titleNegative Differential Transconductance in Silicon Quantum Well Metal-Oxide-Semiconductor Field Effect/Bipolar Hybrid Transistorsen_US
dc.type.genreArticleen_US

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