Large Ferroelectric Polarization of TiN/Hf₀․₅Zr₀․₅0₂ Capacitors Due to Stress-Induced Crystallization at Low Thermal Budget

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dc.contributor.ORCID0000-0001-7335-1053 (Lee, JS)en_US
dc.contributor.ORCID0000-0001-9477-5728 (Byun, Y-C)en_US
dc.contributor.ORCID0000-0003-0690-7423 (Young, CD)en_US
dc.contributor.ORCID0000-0003-2781-5149 (Kim, J)en_US
dc.contributor.VIAF70133685 (Kim, J)en_US
dc.contributor.authorKim, Si Joonen_US
dc.contributor.authorNarayan, Dushyanten_US
dc.contributor.authorLee, Jae-Gilen_US
dc.contributor.authorMohan, Jaidahen_US
dc.contributor.authorLee, Joy S.en_US
dc.contributor.authorLee, Jaebeomen_US
dc.contributor.authorKim, Harrison S.en_US
dc.contributor.authorByun, Young-Chulen_US
dc.contributor.authorLucero, Antonio T.en_US
dc.contributor.authorYoung, Chadwin D.en_US
dc.contributor.authorSummerfelt, Scott R.en_US
dc.contributor.authorSan, Tameren_US
dc.contributor.authorColombo, Luigien_US
dc.contributor.authorKim, Jiyoungen_US
dc.contributor.utdAuthorKim, Si Joonen_US
dc.contributor.utdAuthorNarayan, Dushyanten_US
dc.contributor.utdAuthorLee, Jae-Gilen_US
dc.contributor.utdAuthorMohan, Jaidahen_US
dc.contributor.utdAuthorLee, Joy S.en_US
dc.contributor.utdAuthorLee, Jaebeomen_US
dc.contributor.utdAuthorKim, Harrison S.en_US
dc.contributor.utdAuthorByun, Young-Chulen_US
dc.contributor.utdAuthorLucero, Antonio T.en_US
dc.contributor.utdAuthorYoung, Chadwin D.en_US
dc.contributor.utdAuthorKim, Jiyoungen_US
dc.date.accessioned2018-10-22T19:28:13Z
dc.date.available2018-10-22T19:28:13Z
dc.date.created2017-12-12en_US
dc.date.issued2018-10-22
dc.descriptionIncludes supplementary materialen_US
dc.description.abstractWe report on atomic layer deposited Hf₀․₅Zr₀․₅0₂ (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 μC/cm²) and a low FE saturation voltage (~1.5V) as extracted from pulse write/read measurements. The large FE polarization in HZO is achieved by the formation of a non-centrosymmetric orthorhombic phase, which is enabled by the TiN top electrode (TE) having a thickness of at least 90nm. The TiN films are deposited at room temperature and annealed at 400 ⁰C in an inert environment for at least 1 min in a rapid thermal annealing system. The room-temperature deposited TiN TE acts as a tensile stressor on the HZO film during the annealing process. The stress-inducing TiN TE is shown to inhibit the formation of the monoclinic phase during HZO crystallization, forming an orthorhombic phase that generates a large FE polarization, even at low process temperatures.en_US
dc.description.departmentErik Jonsson School of Engineering and Computer Scienceen_US
dc.identifier.bibliographicCitationKim, Si Joon, Dushyant Narayan, Jae-Gil Lee, Jaidah Mohan, et al. 2017. "Large ferroelectric polarization of TiN/Hf₀․₅Zr₀․₅0₂ capacitors due to stress-induced crystallization at low budget." Applied Physics Letters 111(24), doi:10.1063/1.4995619en_US
dc.identifier.issn0003-6951en_US
dc.identifier.issue24en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/6208
dc.identifier.volume111en_US
dc.language.isoenen_US
dc.publisherAmer Inst Physicsen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4995619en_US
dc.rights©2018 AIP Publishingen_US
dc.source.journalApplied Physics Lettersen_US
dc.subjectThin-filmsen_US
dc.subjectFluorous aciden_US
dc.subjectZirconium oxideen_US
dc.subjectFerroelectricityen_US
dc.titleLarge Ferroelectric Polarization of TiN/Hf₀․₅Zr₀․₅0₂ Capacitors Due to Stress-Induced Crystallization at Low Thermal Budgeten_US
dc.type.genrearticleen_US

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