Polycrystalline Diamond Films with Tailored Micro/Nanostructure/Doping for New Large Area Film-Based Diamond Electronics

dc.contributor.authorAlcantar-Peña, Jesus J.
dc.contributor.authorde Obaldia, Elida
dc.contributor.authorTirado, Pablo
dc.contributor.authorArellano-Jimenez, Maria J.
dc.contributor.authorAguilar, Jose E. Ortega
dc.contributor.authorVeyan, Jean F.
dc.contributor.authorYacaman, Miguel J.
dc.contributor.authorKoudriavtsev, Yuriy
dc.contributor.authorAuciello, Orlando
dc.contributor.utdAuthorAlcantar-Peña, Jesus J.
dc.contributor.utdAuthorde Obaldia, Elida
dc.contributor.utdAuthorTirado, Pablo
dc.contributor.utdAuthorVeyan, Jean F.
dc.contributor.utdAuthorAuciello, Orlando
dc.date.accessioned2020-04-08T21:27:52Z
dc.date.available2020-04-08T21:27:52Z
dc.date.issued2018-12-03
dc.descriptionDue to copyright restrictions and/or publisher's policy full text access from Treasures at UT Dallas is limited to current UTD affiliates (use the provided Link to Article).
dc.description.abstractThis paper describes processes developed to change two key electrical properties (electrical resistivity and carrier type) of ultrananocrystalline diamond (UNCD) to microcrystalline diamond (MCD) films. The results show that the electrical properties of the investigated polycrystalline diamond films depend on the grain size and plasma treated grain boundary networks interfaces and external films' surfaces, in which hydrogen, fluorine or nitrogen can be incorporated to tailor electrical carriers-type to tune the electrical properties. Exploring the feasibility of modulating the resistivity of polycrystalline diamond films via tailoring of grain size, surface chemistry and nitrogen or fluorine incorporation into films' grain boundaries and external surfaces may enable applications of these diamond films as active or heat dissipation layers on micro/nano-electronic devices. This work can open the pathway to enabling an industrial process for new diamond-based electronics, since polycrystalline diamond films can be grown with extreme uniformity on 300 mm diameter Si wafers, used in manufacturing of current Si-based micro/nano-electronic devices.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.description.sponsorshipWelch Foundation grant AX-1615
dc.identifier.bibliographicCitationAlcantar-Pena, Jesus J., Elida de Obaldia, Pablo Tirado, Maria J. Arellano-Jimenez, et al. 2019. "Polycrystalline diamond films with tailored micro/nanostructure/doping for new large area film-based diamond electronics." Diamond and Related Materials 91: 261-271, doi: 10.1016/j.diamond.2018.11.028
dc.identifier.issn0925-9635
dc.identifier.urihttp://dx.doi.org/10.1016/j.diamond.2018.11.028
dc.identifier.urihttps://hdl.handle.net/10735.1/7903
dc.identifier.volume91
dc.language.isoen
dc.publisherElsevier Science SA
dc.rights©2018 Elsevier B.V. All Rights Reserved.
dc.source.journalDiamond and Related Materials
dc.subjectChemical vapor deposition
dc.subjectHydrogen
dc.subjectIntegrated circuits—Passivation
dc.subjectNitrogen
dc.subjectBoron
dc.subjectDiamond thin films
dc.titlePolycrystalline Diamond Films with Tailored Micro/Nanostructure/Doping for New Large Area Film-Based Diamond Electronics
dc.type.genrearticle

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