Controlled Crack Propagation for Atomic Precision Handling of Wafer-Scale Two-Dimensional Materials

Date

2018-10-11

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Publisher

American Association for the Advancement of Science

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Abstract

Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a trial-and-error process. Controlling the number of 2D layers through direct growth also presents difficulty because of the high nucleation barrier on 2D materials. We demonstrate a layer-resolved 2D material splitting technique that permits high-throughput production of multiple monolayers of wafer-scale (5-centimeter diameter) 2D materials by splitting single stacks of thick 2D materials grown on a single wafer. Wafer-scale uniformity of hexagonal boron nitride, tungsten disulfide, tungsten diselenide, molybdenum disulfide, and molybdenum diselenide monolayers was verified by photoluminescence response and by substantial retention of electronic conductivity. We fabricated wafer-scale van der Waals heterostructures, including field-effect transistors, with single-atom thickness resolution. © 2018 American Association for the Advancement of Science. All rights reserved.

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Keywords

Boron nitride, Molybdenum, Molybdenum diselenide, Molybdenum disulfide, Tungsten diselenide, Tungsten disulfide, Atomic force microscopy, Electric conductivity, Photoluminescence, Raman spectrometry, Scanning electron microscopy

item.page.sponsorship

NSF grant no. CMMI-1825731, CMMI-1825256, DMR-1231319, DMR-1700137; ONR grant no. N00014-16-1-2657; Air Force contract no. FA8721-05-C-0002 and/or FA8702-15-D-0001; NIST through award no. 70NANB17H041

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©2018 The Authors. All Rights Reserved.

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