In Situ Study of the Role of Substrate Temperature during Atomic Layer Deposition of HfO2 on InP

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dc.contributor.VIAF70133685 (Kim, J)
dc.contributor.authorDong, Hongen_US
dc.contributor.authorSantosh, KCen_US
dc.contributor.authorQin, Xiaoyeen_US
dc.contributor.authorBrennan, Barryen_US
dc.contributor.authorMcDonnell, Stevenen_US
dc.contributor.authorZhernokletov, Dmitryen_US
dc.contributor.authorHinkle, Christopher L.en_US
dc.contributor.authorKim, Jiyoungen_US
dc.contributor.authorCho, Kyeongjieen_US
dc.contributor.authorWallace, Robert M.en_US
dc.date.accessioned2014-07-11T16:34:22Z
dc.date.available2014-07-11T16:34:22Z
dc.date.created2013-10-16
dc.date.issued2013-10-16en_US
dc.date.submitted2013-09-06en_US
dc.description.abstractThe dependence of the "self cleaning" effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO₂ on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO₂ at different temperatures. An (NH₄)₂ S treatment is seen to effectively remove native oxides and passivate the InP surfaces independent of substrate temperature studied (200°C, 250°C and 300°C) before and after the ALD process. Density functional theory modeling provides insight into the mechanism of the changes in the P-oxide chemical states.en_US
dc.identifier.citationDong, H., K. C. Santosh, X. Qin, B. Brennan, et al. 2013. "In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP." 114(154105): 1-5.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.issue154105en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/3650
dc.identifier.volume114en_US
dc.language.isoenen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4825218en_US
dc.rights©2013 AIP Publishing LLCen_US
dc.source.journalJournal of Applied Physicsen_US
dc.subjectOxidesen_US
dc.subjectS-passivated samplesen_US
dc.subjectHafnium oxideen_US
dc.subjectIndium phosphideen_US
dc.titleIn Situ Study of the Role of Substrate Temperature during Atomic Layer Deposition of HfO2 on InPen_US
dc.typetexten_US
dc.type.genrearticleen_US

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Wallace, Robert M.
Cho, Kyeongjae
Hinkle, Christopher L.
JECS Staff and Student Research
Kim, Jiyoung