15.6 A 10MHz i-Collapse Failure Self-Prognostic GaN Power Converter with TJ -Independent In-Situ Condition Monitoring and Proactive Temperature Frequency Scaling

dc.contributor.authorChen, Yingping
dc.contributor.authorMa, Dongsheng (Brian)
dc.contributor.utdAuthorChen, Yingping
dc.contributor.utdAuthorMa, Dongsheng (Brian)
dc.descriptionFull text access from Treasures at UT Dallas is restricted to current UTD affiliates (use the provided Link to Article).
dc.description.abstractWith superior figure of merits, GaN switchs are highly anticipated to replace MOSFETs in high-performance power circuits [1], [2]. However, GaN technology today still faces formidable reliability challenges [3]. While GaN device aging and failure mechanisms are not as well-studied as silicon counterparts, its unique structure and operation also induce new aging and failure problems. Use a GaN switch M_H in a buck converter of Fig. 15.6.1 as an example. As a high-side switch, it faces large-switching-current and high-input-voltage stress in each charge phase. After repetitive switching actions, a number of electron carriers can be injected into the AlGaN barrier and buffer layers, known as hot-electron injection. In discharge phase, M_H is off, but M_L becomes conductive, which shorts the source of M_H to ground, creating high VDS stress on M_H. This induces charge traps in the insulator and buffer layers, known as charge trapping. As a joint effect of both mechanisms, trapped or injected electrons in the insulator, AlGaN barrier and buffer layers repel free electrons in the channel when M_H is on, weakening the 2-dimensional electron-gas (2DEG) layer and further elevating hot-electron injection. This effect, known as current collapse or i- collapse for short, degrades channel conductivity, increases the on-resistance RDS_ON, and is a major cause of GaN-switch aging and failure [3]. On the other hand, another aging cause is thermal effect. To reduce manufacture costs and improve technology compatibility, it is common to fabricate GaN transistors on a silicon substrate. Accordingly, to reduce lattice mismatch, an AlGaN buffer layer is often inserted (Fig. 15.6.1). However, this increases the junction-to-ambient thermal resistance R θJA, which, together with the increased R_{DS_ON} due to the i- collapse, causes higher power and heat generation, elevating the junction temperature, T J. According to Arrhenius' Law, as T J increases, the mean-time-to-failure (MTTF) drops exponentially [4]. Even worse, the elevated T_J deteriorates the i- collapse effect with even higher R_{DS_ON}, significantly reducing device lifetime. ©2019 IEEE.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationChen, Y., and D. B. Ma. 2019. "15.6 A 10MHz i-Collapse Failure Self-Prognostic GaN Power Converter with TJ-Independent In-Situ Condition Monitoring and Proactive Temperature Frequency Scaling." Digest of Technical Papers - IEEE International Solid-State Circuits Conference: 248-250, doi: 10.1109/ISSCC.2019.8662527
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.isPartOfDigest of Technical Papers - IEEE International Solid-State Circuits Conference
dc.rights©2019 IEEE
dc.subjectAluminum alloys
dc.subjectAluminum gallium nitride
dc.subjectDC-to-DC converters
dc.subjectElectron gas
dc.subjectGallium nitride
dc.subjectHeat resistant alloys
dc.subjectIndium compounds
dc.subjectElectron gas--Two-dimensional
dc.subjectSubstrates, Silicon
dc.title15.6 A 10MHz i-Collapse Failure Self-Prognostic GaN Power Converter with TJ -Independent In-Situ Condition Monitoring and Proactive Temperature Frequency Scaling


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