A Crystalline Oxide Passivation for Al₂O₃/AlGaN/GaN
Date
ORCID
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics Inc.
item.page.doi
Abstract
In situ X-ray photoelectron spectroscopy and low energy electron diffraction are performed to study the formation of a crystalline oxide on the AlGaN surface. The oxidation of the AlGaN surface is prepared by annealing and remote N₂+O₂ plasma pretreatments resulting in a stable crystalline oxide. The impact of the oxide on the interface state density is studied by capacitance voltage (C-V) measurements. It is found that a remote plasma exposure at 550⁰ C shows the smallest frequency dispersion. Crystalline oxide formation may provide a novel passivation method for high quality AlGaN/GaN devices.
Description
Keywords
Aluminum oxide, Aluminium gallium nitride, Gallium nitride, Crystalline oxide
item.page.sponsorship
"This work was supported by the Asian Office of Aerospace Research and Development (AOARD) through the Air Force office of Scientific Research (AFOSR) under Grant No. FA2384-11-1-0477. J. Kim also acknowledges financial support by the IT R&D program of MOTIE/KETI (Grant No. 10048933).
Rights
©2014 AIP Publishing LLC
Citation
Qin, X., H. Dong, J. Kim, and R. M. Wallace. 2014. "A crystalline oxide passivation for Al₂O₃/AlGaN/GaN." Applied Physics Letters 105(14): 141604-1 to 5.