Cubic Crystalline Erbium Oxide Growth on GaN(0001) by Atomic Layer Deposition

dc.contributor.authorChen, Pei-Yuen_US
dc.contributor.authorPosadas, Agham B.en_US
dc.contributor.authorKwon, Sunahen_US
dc.contributor.authorWang, Qingxiaoen_US
dc.contributor.authorKim, Moon J.en_US
dc.contributor.authorDemkov, Alexander A.en_US
dc.contributor.authorEkerdt, John G.en_US
dc.contributor.utdAuthorKwon, Sunahen_US
dc.contributor.utdAuthorWang, Qingxiaoen_US
dc.contributor.utdAuthorKim, Moon J.en_US
dc.date.accessioned2018-10-22T19:29:50Z
dc.date.available2018-10-22T19:29:50Z
dc.date.created2017-12-04en_US
dc.date.issued2018-10-22
dc.descriptionFull text access from Treasures at UT Dallas is restricted to current UTD affiliates until 2019-01en_US
dc.description.abstractGrowth of crystalline Er₂O₃, a rare earth sesquioxide, on GaN(0001) is described. Ex situ HCl and NH₄OH solutions and an in situ N₂ plasma are used to remove impurities on the GaN surface and result in a Ga/N stoichiometry of 1.02. Using atomic layer deposition with erbium tris(isopropylcyclopentadienyl) [Er((^{i}PrCp)₃] and water, crystalline cubic Er₂O₃ (C-Er₂O₃) is grown on GaN at 250 ⁰C. The orientation relationships between the C-Er₂O₃ film and the GaN substrate are C-Er₂O₃(222)en_US
dc.description.abstractGaN(0001), C-Er₂O₃ (-440)en_US
dc.description.abstractGaN (11-20), and C-Er₂O₃en_US
dc.description.abstractGaN (1-100). Scanning transmission electron microscopy and electron energy loss spectroscopy are used to examine the microstructure of C-Er₂O₃ and its interface with GaN. With post-deposition annealing at 600 ⁰C, a thicker interfacial layer is observed, and two transition layers, crystalline GaN_wO_z and crystalline GaEr_xO_y, are found between GaN and C-Er₂O₃. The tensile strain in the C-Er₂O₃ film is studied with x-ray diffraction by changes in both out-of-plane and in-plane d-spacing. Fully relaxed C-Er₂O₃ films on GaN are obtained when the film thickness is around 13 nm. Additionally, a valence band offset of 0.7 eV and a conduction band offset of 1.2 eV are obtained using x-ray photoelectron spectroscopy.en_US
dc.description.departmentErik Jonsson School of Engineering and Computer Scienceen_US
dc.description.sponsorshipNational Science Foundation (Award No. DMR-1507970)en_US
dc.identifier.bibliographicCitationChen, Pei-Yu, Agham B. Posadas, Sunah Kwon, Qingxiao Wang, et al. 2017. "Cubic crystalline erbium oxide growth on GaN(0001) by atomic layer deposition." Journal of Applied Physics 122(21), doi:10.1063/1.4999342en_US
dc.identifier.issn0021-8979en_US
dc.identifier.issue21en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/6210
dc.identifier.volume122en_US
dc.language.isoenen_US
dc.publisherAmer Inst Physicsen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4999342en_US
dc.rights©2017 AIP Publishing LLCen_US
dc.source.journalJournal of Applied Physicsen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.subjectField-effect transistorsen_US
dc.subjectDielectricsen_US
dc.subjectPhase transformations (Statistical physics)en_US
dc.subjectScandium(III) Oxideen_US
dc.subjectGallium nitrideen_US
dc.subjectSemiconductorsen_US
dc.subjectMetal oxide semiconductor field-effect transistorsen_US
dc.subjectEpitaxyen_US
dc.subjectOxidesen_US
dc.subjectScanning electron microscopyen_US
dc.subjectX-rays--Diffractionen_US
dc.subjectThin filmsen_US
dc.subjectAtomic layer depositionen_US
dc.subjectCrystals--Structureen_US
dc.titleCubic Crystalline Erbium Oxide Growth on GaN(0001) by Atomic Layer Depositionen_US
dc.type.genrearticleen_US

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