The Band Structure Change of Hf₀.₅Zr₀.₅O₂/Ge System upon Post Deposition Annealing
dc.contributor.ORCID | 0000-0003-2698-7774 (Cho, K) | |
dc.contributor.VIAF | 369148996084659752200 (Cho, K) | |
dc.contributor.author | Feng, Z. | |
dc.contributor.author | Peng, Y. | |
dc.contributor.author | Liu, H. | |
dc.contributor.author | Sun, Y. | |
dc.contributor.author | Wang, Y. | |
dc.contributor.author | Meng, M. | |
dc.contributor.author | Liu, H. | |
dc.contributor.author | Wang, J. | |
dc.contributor.author | Wu, R. | |
dc.contributor.author | Wang, Xinglu | |
dc.contributor.author | Cho, Kyeongjae | |
dc.contributor.author | Han, G. | |
dc.contributor.author | Dong, H. | |
dc.contributor.utdAuthor | Wang, Xinglu | |
dc.contributor.utdAuthor | Cho, Kyeongjae | |
dc.date.accessioned | 2020-03-11T17:03:23Z | |
dc.date.available | 2020-03-11T17:03:23Z | |
dc.date.issued | 2019-05-25 | |
dc.description | Supplementary material is available on publisher's website. Use the DOI link below. | |
dc.description.abstract | Hafnium zirconium oxide films have been utilized in negative capacitance (NC) field-effect transistors (FETs). The band alignment of semiconductor and HfZrOₓ film is critical to obtain high device performance. The band alignment of Hf₀.₅Zr₀.₅O₂/SiOₓ/Ge system before and after post deposition annealing at 500 °C is studied via angle resolved X-ray photoelectron spectroscopy, synchrotron radiation photoemission spectroscopy and UV–Visible spectroscopy. The band gap of Hf₀.₅Zr₀.₅O₂ is seen narrowed 0.27 ± 0.05 eV, and the valence band offset between Hf₀.₅Zr₀.₅O₂ and Ge decreases 0.25 eV ± 0.05 eV after PDA at 500 °C. Therefore, the conduction band offset is nearly unchanged. This work gives insights into the interface physics about Hf₀.₅Zr₀.₅O₂/SiOₓ and is valuable for Ge-based NC pFETs. ©2019 Elsevier B.V. | |
dc.description.department | Erik Jonsson School of Engineering and Computer Science | |
dc.description.sponsorship | National Natural Science Foundation of China (No. 61504070, 61874081, 61534004,61604112, and 61622405), and the Tianjin Natural Science Foundation (No. 15JCYBJC52000) | |
dc.identifier.bibliographicCitation | Feng, Z., Y. Peng, H. Liu, Y. Sun, et al. 2019. "The band structure change of Hf₀.₅Zr₀.₅O₂/Ge system upon post deposition annealing." Applied Surface Science 488: 778-782, doi: 10.1016/j.apsusc.2019.05.282 | |
dc.identifier.issn | 0169-4332 | |
dc.identifier.uri | http://dx.doi.org/10.1016/j.apsusc.2019.05.282 | |
dc.identifier.uri | https://hdl.handle.net/10735.1/7389 | |
dc.identifier.volume | 488 | |
dc.language.iso | en | |
dc.publisher | Elsevier B.V. | |
dc.rights | ©2019 Elsevier B.V. All Rights Reserved. | |
dc.source.journal | Applied Surface Science | |
dc.subject | Germanium | |
dc.subject | Hafnium zirconium oxide | |
dc.subject | Energy gap (Physics) | |
dc.subject | Field-effect transistors | |
dc.subject | Germanium | |
dc.subject | Hafnium oxides | |
dc.subject | Molecular orbitals | |
dc.subject | Photoelectron spectroscopy | |
dc.subject | Silicon compounds | |
dc.subject | Synchrotron radiation | |
dc.subject | X ray photoelectron spectroscopy | |
dc.subject | Field-effect transistors | |
dc.subject | Zirconium compounds | |
dc.title | The Band Structure Change of Hf₀.₅Zr₀.₅O₂/Ge System upon Post Deposition Annealing | |
dc.type.genre | article |
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