Spurious Dangling Bond Formation During Atomically Precise Hydrogen Depassivation Lithography on Si(100): The Role of Liberated Hydrogen



The production of spurious dangling bonds during the hydrogen depassivation lithography process on Si(100)-H is studied. It is shown that the number of spurious dangling bonds produced depends on the size of the primary pattern on the surface, not on the electron dose, indicating that the spurious dangling bonds are formed via an interaction of the liberated hydrogen with the surface. It is also shown that repassivation may occur if hydrogen depassivation lithography is performed near an already patterned area. Finally, it is argued that the product of the interaction is a single dangling bond next to a monohydride silicon on a silicon dimer, with a reaction probability much in excess of that previously observed.



Hydrogen depassivation lithography, Surface patterning, Surface passivation, Backscattering, Dangling bonds, Atom surface interactions


"This work was supported by a Contract from DARPA (N66001-08-C-2040) and by a grant from the Emerging Technology Fund of the State of Texas."


©2014 American Vacuum Society


Ballard, Joshua B., James H. G. Owen, Justin D. Alexander, William R. Owen, et al. 2014. "Spurious dangling bond formation during atomically precise hydrogen depassivation lithography on Si(100): The role of liberated hydrogen." Journal of Vacuum Science & Technology B 32(021805): 1-4.