Development of a Long-Wave Infrared Band-Edge Thermometry Instrument

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dc.contributor.ORCID0000-0002-4381-5782 (Marquis, JM)
dc.contributor.advisorFrensley, William R.
dc.creatorMarquis, Jeremy Michael
dc.date.accessioned2019-04-25T04:14:37Z
dc.date.available2019-04-25T04:14:37Z
dc.date.created2018-12
dc.date.issued2018-12
dc.date.submittedDecember 2018
dc.date.updated2019-04-25T04:14:38Z
dc.description.abstractAccurate measurement of substrate temperature is one of the most critical process control parameters for molecular beam epitaxy (MBE) growth. Band-edge thermometry instruments have proven to be a valuable tool for process control during MBE growth of semiconductor films, providing as high as ±1 °C temperature resolution. The increasing use of InAs, GaSb, and AlSb III-V materials necessitates a method for accurately measuring the temperature of their lattice-matched GaSb substrates. Current-technology instruments typically rely on InGaAs detector materials which have a maximum wavelength λ detection of ~1.7 µm, but GaSb substrates have a band gap corresponding to > 2 µm wavelength. MBE growth needs a band-edge thermometry instrument capable of λ > 2 µm for process control. Such an instrument has been developed using an InAs/InGaSb strained-layer superlattice detector sensitive sensitive to 2-9.5 µm long-wave IR wavelengths.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttps://hdl.handle.net/10735.1/6373
dc.language.isoen
dc.subjectMetrology
dc.subjectTemperature measuring instruments
dc.subjectInfrared spectroscopy
dc.subjectSemiconductors
dc.subjectSoftware engineering
dc.subjectEpitaxy
dc.titleDevelopment of a Long-Wave Infrared Band-Edge Thermometry Instrument
dc.typeDissertation
dc.type.materialtext
thesis.degree.departmentElectrical Engineering
thesis.degree.grantorThe University of Texas at Dallas
thesis.degree.levelDoctoral
thesis.degree.namePHD

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