Far Infrared Edge Photoresponse and Persistent Edge Transport in an Inverted InAs/GaSb Heterostructure

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dc.contributor.authorDyer, G. C.en_US
dc.contributor.authorShi, Xiaoyanen_US
dc.contributor.authorOlson, B. V.en_US
dc.contributor.authorHawkins, S. D.en_US
dc.contributor.authorKlem, J. F.en_US
dc.contributor.authorShaner, E. A.en_US
dc.contributor.authorPan, W.en_US
dc.contributor.utdAuthorShi, Xiaoyanen_US
dc.date.accessioned2016-07-21T19:55:27Z
dc.date.available2016-07-21T19:55:27Z
dc.date.created2016-01-07en_US
dc.date.issued2016-01-07en_US
dc.description.abstractDirect current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.en_US
dc.description.sponsorshipThis work was supported by the Department of Energy, Office of Basic Energy Science, Division of Materials Sciences and Engineering. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy’s National Nuclear Security Administration under Contract No. DEAC04-94AL85000.en_US
dc.identifier.bibliographicCitationDyer, G. C., X. Shi, B. V. Olson, S. D. Hawkins, et al. 2016. "Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure." Applied Physics Letters 108(1), doi:10.1063/1.4939234.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.issue1en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/4962
dc.identifier.volume108en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Incen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4939234
dc.rights©2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.sourceApplied Physics Letters
dc.subjectHeterojunctionsen_US
dc.subjectIndium antimonideen_US
dc.subjectQuantum chemistryen_US
dc.subjectSemiconductorsen_US
dc.subjectQuantum wellsen_US
dc.titleFar Infrared Edge Photoresponse and Persistent Edge Transport in an Inverted InAs/GaSb Heterostructureen_US
dc.type.genreArticleen_US

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