Ferroelectric Hf₀․₅Zr₀․₅O₂ Thin Films: A Review of Recent Advances

dc.contributor.ORCID0000-0003-2781-5149 (Kim, J)
dc.contributor.VIAF70133685 (Kim, J)
dc.contributor.authorKim, Si Joon
dc.contributor.authorMohan, Jaidah
dc.contributor.authorSummerfelt, Scott R.
dc.contributor.authorKim, Jiyoung
dc.contributor.utdAuthorMohan, Jaidah
dc.contributor.utdAuthorKim, Jiyoung
dc.date.accessioned2020-05-26T21:28:31Z
dc.date.available2020-05-26T21:28:31Z
dc.date.issued2018-09-28
dc.descriptionDue to copyright restrictions and/or publisher's policy full text access from Treasures at UT Dallas is limited to current UTD affiliates (use the provided Link to Article).
dc.description.abstractFerroelectricity in HfO₂-based materials, especially Hf₀․₅Zr₀․₅O₂ (HZO), is today one of the most attractive topics because of its wide range of applications in ferroelectric random-access memory, ferroelectric field-effect transistors, ferroelectric tunneling junctions, steep-slope devices, and synaptic devices. The main reason for this increasing interest is that, when compared with conventional ferroelectric materials, HZO is compatible with complementary metal-oxide-semiconductor flow [even back-end of the line thermal budget] and can exhibit robust ferroelectricity even at extremely thin (<10nm) thicknesses. In this report, recent advances in the ferroelectric properties of HZO thin films since the first report in 2011, including doping effects, mechanical stress effects, interface effects, and ferroelectric film thickness effects, are comprehensively reviewed.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationKim, Si Joon, Jaidah Mohan, Scott R. Summerfelt, and Jiyoung Kim. 2019. "Ferroelectric Hf₀․₅Zr₀․₅O₂ Thin Films: A Review of Recent Advances." Journal of Minierals, Metals & Materials 71(1): 246-255, doi: 10.1007/s11837-018-3140-5
dc.identifier.issn1047-4838
dc.identifier.issue1
dc.identifier.urihttp://dx.doi.org/10.1007/s11837-018-3140-5
dc.identifier.urihttps://hdl.handle.net/10735.1/8655
dc.identifier.volume71
dc.language.isoen
dc.publisherSpringer
dc.rights©2018 The Minerals, Metals & Materials Society
dc.source.journalJournal of Minierals, Metals & Materials
dc.subjectCapacitance meters
dc.subjectFerroelectricity
dc.subjectRandom access memory
dc.subjectField-effect transistors
dc.titleFerroelectric Hf₀․₅Zr₀․₅O₂ Thin Films: A Review of Recent Advances
dc.type.genrearticle

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