Study Of Quantum Transport In Nano-scale Transistors Using Empirical Pseudopotentials

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dc.contributor.advisorFischetti, Massimo V.
dc.creatorChen, Shanmeng
dc.date.accessioned2022-07-27T14:23:32Z
dc.date.available2022-07-27T14:23:32Z
dc.date.created2021-05
dc.date.issued2020-12-15
dc.date.submittedMay 2021
dc.date.updated2022-07-27T14:23:35Z
dc.description.abstractSince the size of transistors continues to scale down to nanometer dimensions, the atomistic properties of the device need to be considered in the near future. Therefore, quantum transport methods should be employed to study the electronic-transport properties of such small devices. Due to the higher accuracy and computational efficiency, we employ the empiricalpseudopotential method, since, by definition, it reproduces correctly experimental information, such as band gaps and effective masses. Thus, we present the quantum-transport method with open-boundary conditions using the quantum transmitting boundary method (QTBM) using empirical pseudopotentials to treat atomistically nano-scale devices. We perform the transport simulation of 5 nm gate-length field-effect transistors (FETs) with different channel materials, such as silicon nanowires (SiNWs), armchair graphene nanoribbons (aGNRs), and armchair phosphorene nanoribbon (aPNRs), and the results indicate SiNWFETs exhibit the best sub-threshold slope (SS) of ∼66 mV/decade. We also investigate the single vacancy impact on aGNRFETs at different locations in the ribbon. The results show that even one single vacancy has a big impact on the transport current, especially when edge defect is located in the middle of the channel. Pauli master equation has been implemented as post process of the ballistic calculation with scattering rate calculated using Fermi’s Golden rule and deformation potential method. The impact of scattering on the transport behavior of aGNRFETs and SiNWFETs has been studied as examples of application.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttps://hdl.handle.net/10735.1/9425
dc.language.isoen
dc.subjectQuantum theory
dc.subjectTransport theory
dc.subjectSemiconductors
dc.subjectGraphene
dc.subjectSilicon
dc.subjectPauli exclusion principle
dc.subjectScattering (Physics)
dc.titleStudy Of Quantum Transport In Nano-scale Transistors Using Empirical Pseudopotentials
dc.typeThesis
dc.type.materialtext
thesis.degree.departmentMaterials Science and Engineering
thesis.degree.grantorThe University of Texas at Dallas
thesis.degree.levelDoctoral
thesis.degree.namePHD

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