In situ atomic layer deposition half cycle study of Al2O 3 growth on AlGaN

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dc.contributor.VIAF70133685 (Kim, J)
dc.contributor.authorBrennan, Barryen_US
dc.contributor.authorQin, Xiaoyeen_US
dc.contributor.authorDong, Hongen_US
dc.contributor.authorKim, Jiyoungen_US
dc.contributor.authorWallace, Robert M.en_US
dc.date.accessioned2013-01-15T17:34:25Z
dc.date.available2013-01-15T17:34:25Z
dc.date.created2012-11-10en_US
dc.date.issued2012-11-10en_US
dc.description.abstractUse the DOI address to see the article abstract. A subscription or fee may be necessary to view the article.en_US
dc.description.versionFinal published versionen_US
dc.identifier.bibliographicCitationBrennan, B., X. Qin, H. Dong, J. Kim, and R.M. Wallace. “In Situ Atomic Layer Deposition Half Cycle Study of Al2O 3 Growth on AlGaN.” Applied Physics Letters 101, no. 21 (2012).en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/2500
dc.publisherAmerican Institute of Physicsen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4767520en_US
dc.rights© 2012 American Institute of Physics. This article may be downloaded for personal use only.en_US
dc.source.journalApplied Physics Lettersen_US
dc.subjectAtomic layer depositionen_US
dc.subjectX-ray photoelectron spectroscopy.en_US
dc.subjectAtomic layer depositionen_US
dc.titleIn situ atomic layer deposition half cycle study of Al2O 3 growth on AlGaNen_US
dc.typeTexten_US
dc.type.genrearticleen_US

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