Static and Dynamic Electronic Characterization of Organic Monolayers Grafted on a Silicon Surface

dc.contributor.authorPluchery, O.en_US
dc.contributor.authorZhang, Y.en_US
dc.contributor.authorBenbalagh, R.en_US
dc.contributor.authorCaillard, Louisen_US
dc.contributor.authorGallet, J. J.en_US
dc.contributor.authorBournel, F.en_US
dc.contributor.authorLamic-Humblot, A.en_US
dc.contributor.authorSalmeron, M.en_US
dc.contributor.authorChabal, Yves J.en_US
dc.contributor.authorRochet, F.en_US
dc.contributor.utdAuthorCaillard, Louis
dc.contributor.utdAuthorChabal, Yves J.
dc.date.accessioned2016-09-27T20:34:52Z
dc.date.available2016-09-27T20:34:52Z
dc.date.created2016-01-04
dc.descriptionIncludes supplementary material.en_US
dc.description.abstractOrganic layers chemically grafted on silicon offer excellent interfaces that may open up the way for new organic-inorganic hybrid nanoelectronic devices. However, technological achievements rely on the precise electronic characterization of such organic layers. We have prepared ordered grafted organic monolayers (GOMs) on Si(111), sometimes termed self-assembled monolayers (SAMs), by a hydrosilylation reaction with either a 7-carbon or an 11-carbon alkyl chain, with further modification to obtain amine-terminated surfaces. X-ray photoelectron spectroscopy (XPS) is used to determine the band bending (~0.3 eV), and ultraviolet photoelectron spectroscopy (UPS) to measure the work function (~3.4 eV) and the HOMO edge. Scanning tunneling microscopy (STM) confirms that the GOM surface is clean and smooth. Finally, conductive AFM is used to measure electron transport through the monolayer and to identify transition between the tunneling and the field emission regimes. These organic monolayers offer a promising alternative to silicon dioxide thin films for fabricating metal-insulator-semiconductor (MIS) junctions. We show that gold nanoparticles can be covalently attached to mimic metallic nano-electrodes and that the electrical quality of the GOMs is completely preserved in the process.;en_US
dc.identifier.bibliographicCitationPluchery, O., Y. Zhang, R. Benbalagh, L. Caillard, et al. 2016. "Static and dynamic electronic characterization of organic monolayers grafted on a silicon surface." Physical Chemistry Chemical Physics 18(5), doi:10.1039/c5cp05943g.en_US
dc.identifier.issn1463-9084en_US
dc.identifier.issn1463-9076en_US
dc.identifier.issue5en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/5083
dc.identifier.volume18en_US
dc.publisherRoyal Society of Chemistryen_US
dc.relation.urihttp://dx.doi.org/10.1039/c5cp05943gen_US
dc.rights©2016 The Owner Societies. This article may not be further made available or distributed.en_US
dc.source.journalPhysical Chemistry Chemical Physicsen_US
dc.subjectSilicaen_US
dc.subjectSemiconductor nanoparticlesen_US
dc.subjectOxidationen_US
dc.subjectAminesen_US
dc.subjectPhotoelectron spectroscopyen_US
dc.titleStatic and Dynamic Electronic Characterization of Organic Monolayers Grafted on a Silicon Surfaceen_US
dc.type.genrearticleen_US

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