Solution-Processed Oxide Thin Film Transistors on Shape Memory Polymer Enabled by Photochemical Self-Patterning

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dc.contributor.ORCID0000-0003-0135-0531 (Voit, WE)
dc.contributor.ORCID0000-0002-7821-3001 (Hsu, JWP)
dc.contributor.authorDaunis, Trey B.
dc.contributor.authorBarrera, Diego
dc.contributor.authorGutierrez-Heredia, Gerado
dc.contributor.authorRodriguez-Lopez, Ovidio
dc.contributor.authorWang, Jian
dc.contributor.authorVoit, Walter E.
dc.contributor.authorHsu, Julia W. P.
dc.contributor.utdAuthorHsu, Julia W. P.
dc.contributor.utdAuthorDaunis, Trey B.
dc.contributor.utdAuthorBarrera, Diego
dc.contributor.utdAuthorGutierrez-Heredia, Gerado
dc.contributor.utdAuthorRodriguez-Lopez, Ovidio
dc.contributor.utdAuthorWang, Jian
dc.contributor.utdAuthorVoit, Walter E.
dc.date.accessioned2019-10-18T21:28:51Z
dc.date.available2019-10-18T21:28:51Z
dc.date.created2018
dc.descriptionFull text access from Treasures at UT Dallas is restricted to current UTD affiliates (use the provided Link to Article).
dc.description.abstractSolution-processed metal oxide electronics on flexible substrates can enable applications from military to health care. Due to limited thermal budgets and mismatched coefficients of thermal expansion between oxides and substrates, achieving good performance in solution-processed oxide films remains a challenge. Additionally, the use of traditional photolithographic processes is incompatible with low-cost, high-throughput roll-to-roll processing. Here, we demonstrate solution-deposited oxide thin film transistors (TFTs) on a shape memory polymer substrate, which offers unique control of final device shape and modulus. The key enabling step is the exposure of the precursor film to UV-ozone through a shadow mask to perform patterning and photochemical conversion simultaneously. These TFTs exhibit mobility up to 160 cm2/(V s), subthreshold swing as low as 110 mV/dec, and threshold voltage between -2 and 0 V, while maintaining compatibility with a flexible form factor at processing temperatures below 250 °C. ©2018 Materials Research Society.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationDaunis, T. B., D. Barrera, G. Gutierrez-Heredia, O. Rodriguez-Lopez, et al. 2018. "Solution-processed oxide thin film transistors on shape memory polymer enabled by photochemical self-patterning." Journal of Materials Research 33(17): 2454-2462, doi: 10.1557/jmr.2018.296
dc.identifier.issn0884-2914
dc.identifier.issue17
dc.identifier.urihttps://hdl.handle.net/10735.1/7016
dc.identifier.volume33
dc.language.isoen
dc.publisherCambridge University Press
dc.relation.urihttp://dx.doi.org/10.1557/jmr.2018.296
dc.rights©2018 Materials Research Society
dc.source.journalJournal of Materials Research
dc.subjectOxides
dc.subjectPolymers
dc.subjectFlexible electronics
dc.subjectPhotolithography
dc.subjectShape memory effect
dc.subjectExpansion (Heat)
dc.subjectThin-film circuits
dc.subjectThin film transistors
dc.subjectThin films
dc.subjectThresholds (Voltage)
dc.subjectExpansion (Heat)
dc.titleSolution-Processed Oxide Thin Film Transistors on Shape Memory Polymer Enabled by Photochemical Self-Patterning
dc.type.genrearticle

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Hsu, Julia W. P.
Voit, Walter E.