A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy

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dc.contributor.ORCID0000-0003-0690-7423 (Young, CD)
dc.contributor.authorAshton, James P.
dc.contributor.authorMoxim, Stephen J.
dc.contributor.authorLenahan, Patrick M.
dc.contributor.authorMcKay, Colin G.
dc.contributor.authorWaskiewicz, Ryan J.
dc.contributor.authorMyers, Kenneth J.
dc.contributor.authorFlatte, Michael E.
dc.contributor.authorHarmon, Nicholas J.
dc.contributor.authorYoung, Chadwin D.
dc.contributor.utdAuthorYoung, Chadwin D.
dc.date.accessioned2020-04-11T21:23:30Z
dc.date.available2020-04-11T21:23:30Z
dc.date.issued2018-12-06
dc.descriptionDue to copyright restrictions and/or publisher's policy full text access from Treasures at UT Dallas is limited to current UTD affiliates (use the provided Link to Article).
dc.description.abstractWe demonstrate that a new technique, near-zero field magnetoresistance (NZFMR) spectroscopy, can explore radiation damage in a wide variety of devices in a proof-of-concept study. The technique has great potential for the study of atomic-scale mechanisms of radiation damage in 3-D integrated circuits. In our study, we explore radiation damage in structures relevant to 3-D integrated circuits, but not on 3-D test structures themselves. Five structures of great technological importance to 3-D integrated circuits are investigated. We utilize both NZFMR and electrically detected magnetic resonance to investigate radiation effects in these structures. The structures involved in this paper are planar silicon metal-oxide-semiconductor field-effect transistors, silicon-germanium alloy-based transistors, fin-based transistors, silicon dioxide-based flowable oxides, and low-k dielectrics. Our study indicates that NZFMR has great potential in radiation damage studies, with exceptional promise in systems in which more conventional resonance is not possible.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationAshton, James P., Stephen J. Moxim, Patrick M. Lenahan, Colin G. McKay, et al. 2019. "A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy." IEEE Transactions on Nuclear Science 66(1): 428-436, doi: 10.1109/TNS.2018.2885300
dc.identifier.issn0018-9499
dc.identifier.issue1
dc.identifier.urihttp://dx.doi.org/10.1109/TNS.2018.2885300
dc.identifier.urihttps://hdl.handle.net/10735.1/7931
dc.identifier.volume66
dc.language.isoen
dc.publisherInstitute of Electrical Electronics Engineers Inc
dc.rights©2018 IEEE
dc.source.journalIEEE Transactions on Nuclear Science
dc.subjectNuclear magnetic resonance spectroscopy
dc.subjectMetal-oxide-semiconductor field-effect transistors
dc.subjectIntegrated circuits--Testing
dc.subjectRadiation hardening (Electronics)
dc.subjectThree-dimensional integrated circuits
dc.titleA New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy
dc.type.genrearticle

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