Characterization of Ru Thin-Film Conductivity upon Atomic Layer Deposition on H-Passivated Si(111)

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dc.contributor.ISNI0000 0000 4239 3958 (Chabal, YJ)
dc.contributor.LCNA89624105 (Chabal, YJ)
dc.contributor.authorRoodenko, Ecatherina (Katy)en_US
dc.contributor.authorPark, S. K.en_US
dc.contributor.authorKwon, Jinheeen_US
dc.contributor.authorWielunski, L.en_US
dc.contributor.authorChabal, Yves J.en_US
dc.date.accessioned2013-10-10T21:41:06Z
dc.date.available2013-10-10T21:41:06Z
dc.date.created2012-12-11
dc.description.abstractThe sheet resistance measured by a four-probe technique is compared to the resistivity data derived from the optical response of thin ruthenium films grown on hydrogen-passivated Si(111) surfaces by atomic-layer deposition using cyclopentadienyl ethylruthenium dicarbonyl, Ru(Cp)(CO)2Et and O 2 as gas reactant. The Drude-Landauer theory is applied to evaluate the spectroscopic ellipsometry response and the DC resistivity evaluated by 4-point probe measurements. Results indicate that thin Ru films (below ∼5nm) deposited on Si exhibit a higher sheet resistance than similarly grown Ru films on TiN. This is explained by an island-growth mechanism at the initial stages of Ru deposition that greatly diminishes the film conductivity before the formation of a continuous film. © 2012 American Institute of Physics.en_US
dc.identifier.citationRoodenko, K., S. K. Park, J. Kwon, L. Wielunski, et al. 2012. "Characterization of Ru thin-film conductivity upon atomic layer deposition on H-passivated Si(111)." Journal of Applied Physics 112(11).en_US
dc.identifier.issn0021-8979en_US
dc.identifier.issue11en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/2894
dc.identifier.volume112en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4766747en_US
dc.rights© 2012 American Institute of Physicsen_US
dc.source.journalJournal of Applied Physicsen_US
dc.subjectOptical propertiesen_US
dc.subjectSiliconen_US
dc.subjectTitanium nitrideen_US
dc.titleCharacterization of Ru Thin-Film Conductivity upon Atomic Layer Deposition on H-Passivated Si(111)en_US
dc.typetexten_US
dc.type.genrearticleen_US

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