Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon
| dc.contributor.author | Wallace, Robert M. | |
| dc.contributor.author | McDonnell, Stephen | |
| dc.date.accessioned | 2012-10-30T20:55:32Z | |
| dc.date.available | 2013-11-01 | |
| dc.date.copyrighted | 2012-11 | |
| dc.date.created | 2012-09-13 | |
| dc.description.abstract | Many researchers have used nitrogen (N) as a dopant and/or N-containing functional groups to enhance the capacitance of carbon electrodes of electrical double layer (EDL) capacitors. However, the physical mechanism(s) giving rise to the interfacial capacitance of the N-containing carbon electrodes is not well understood. Here, we show that the area-normalized capacitance of lightly N-doped activated graphene with similar porous structure increased from 6 μF cm -2 to 22 μF cm -2 with 0 at%, and 2.3 at% N-doping, respectively. The quantum capacitance of pristine single layer graphene and various N-doped graphene was measured and a trend of upwards shifts of the Dirac Point with increasing N concentration was observed. The increase in bulk capacitance with increasing N concentration, and the increase of the quantum capacitance in the N-doped monolayer graphene versus pristine monolayer graphene suggests that the increase in the EDL type of capacitance of many, if not all, N-doped carbon electrodes studied to date, is primarily due to the modification of the electronic structure of the graphene by the N dopant. It was further found that the quantum capacitance is closely related to the N dopant concentration and N-doping provides an effective way to increase the density of the states of monolayer graphene. | en_US |
| dc.description.embargo | 2013-11-01 | |
| dc.description.embargo | 2013-11-01 | |
| dc.identifier.bibliographicCitation | Zhang, L. L., X. Zhao, H. Ji, M. D. Stoller, L. Lai, S. Murali, S. McDonnell, B. Cleveger, R. M. Wallace, and R. S. Ruoff. 2012. "Nitrogen Doping of Graphene and its Effect on Quantum Capacitance, and a New Insight on the Enhanced Capacitance of N-Doped Carbon." Energy and Environmental Science 5 (11): 9618-9625. | en_US |
| dc.identifier.issn | 1754-5692 | |
| dc.identifier.uri | http://hdl.handle.net/10735.1/2336 | |
| dc.language | English | en_US |
| dc.relation.uri | http://dx.doi.org/10.1039/c2ee23442d | en_US |
| dc.rights | © 2012 The Royal Society of Chemistry | en_US |
| dc.rights.holder | The Royal Society of Chemistry | en_US |
| dc.source.journal | Energy and Environmental Science | en_US |
| dc.subject | Supercapacitors | en_US |
| dc.subject | Dirac point | en_US |
| dc.subject | Nitrogen | en_US |
| dc.subject | Graphene | en_US |
| dc.title | Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon | en_US |
| dc.type | Text | en_US |
| dc.type.genre | article | en_US |