Characterization of GaAs Quantum Well Edge Emitting Semiconductor Lasers

Date

2018-08

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Abstract

This thesis will involve the details surrounding and describing the fabrication and characterization of GaAs laser diodes comprised of quantum well active regions. Within the scope of this thesis is a background to this realm of semiconductor technology, the processing tools that facilitate the fabrication, recipes for photolithography utilizing masks, and an explanation of results for the characterization methods and tests of device performance.

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Keywords

Semiconductor lasers, Diodes, Semiconductor, Gallium arsenide, Photolithography

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©2018 The Author. Digital access to this material is made possible by the Eugene McDermott Library. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.

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