Characterization of GaAs Quantum Well Edge Emitting Semiconductor Lasers

dc.contributor.advisorColeman, James J.
dc.creatorSmith, Isabelle
dc.date.accessioned2019-01-07T17:50:40Z
dc.date.available2019-01-07T17:50:40Z
dc.date.created2018-08
dc.date.issued2018-08
dc.date.submittedAugust 2018
dc.date.updated2019-01-07T17:50:41Z
dc.description.abstractThis thesis will involve the details surrounding and describing the fabrication and characterization of GaAs laser diodes comprised of quantum well active regions. Within the scope of this thesis is a background to this realm of semiconductor technology, the processing tools that facilitate the fabrication, recipes for photolithography utilizing masks, and an explanation of results for the characterization methods and tests of device performance.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/10735.1/6330
dc.language.isoen
dc.rights©2018 The Author. Digital access to this material is made possible by the Eugene McDermott Library. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
dc.subjectSemiconductor lasers
dc.subjectDiodes, Semiconductor
dc.subjectGallium arsenide
dc.subjectPhotolithography
dc.titleCharacterization of GaAs Quantum Well Edge Emitting Semiconductor Lasers
dc.typeThesis
dc.type.materialtext
thesis.degree.departmentElectrical Engineering
thesis.degree.grantorThe University of Texas at Dallas
thesis.degree.levelMasters
thesis.degree.nameMSEE

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